[HTML][HTML] Quantum materials for energy-efficient neuromorphic computing: Opportunities and challenges

A Hoffmann, S Ramanathan, J Grollier, AD Kent… - APL Materials, 2022 - pubs.aip.org
Neuromorphic computing approaches become increasingly important as we address future
needs for efficiently processing massive amounts of data. The unique attributes of quantum …

Control of oxygen vacancy ordering in brownmillerite thin films via ionic liquid gating

H Han, A Sharma, HL Meyerheim, J Yoon, H Deniz… - ACS …, 2022 - ACS Publications
Oxygen defects and their atomic arrangements play a significant role in the physical
properties of many transition metal oxides. The exemplary perovskite SrCoO3-δ (P-SCO) is …

Doping- and Strain-Dependent Electrolyte-Gate-Induced Perovskite to Brownmillerite Transformation in Epitaxial La1–xSrxCoO3−δ Films

V Chaturvedi, WM Postiglione… - … applied materials & …, 2021 - ACS Publications
Much recent attention has focused on the voltage-driven reversible topotactic transformation
between the ferromagnetic metallic perovskite (P) SrCoO3− δ and oxygen-vacancy-ordered …

Mechanisms of Hysteresis and Reversibility across the Voltage-Driven Perovskite–Brownmillerite Transformation in Electrolyte-Gated Ultrathin La0.5Sr0.5CoO3−δ

WM Postiglione, G Yu, V Chaturvedi… - … applied materials & …, 2024 - ACS Publications
Perovskite cobaltites have emerged as archetypes for electrochemical control of materials
properties in electrolyte-gate devices. Voltage-driven redox cycling can be performed …

[HTML][HTML] What controls electrostatic vs electrochemical response in electrolyte-gated materials? A perspective on critical materials factors

C Leighton, T Birol, J Walter - APL Materials, 2022 - pubs.aip.org
Electrolyte-gate transistors are a powerful platform for control of material properties,
spanning semiconducting behavior, insulator-metal transitions, superconductivity …

A new precursor route for the growth of NbO2 thin films by chemical vapor deposition

R Singh, P Chithaiah, CNR Rao - Nanotechnology, 2023 - iopscience.iop.org
Niobium dioxide (NbO 2) exhibits metal-insulator transition (Mott transition) and shows the
potential for application in memristors and neuromorphic devices. Presently growth of NbO 2 …

Metallic Interface between Two Insulating Phases of La1–xSrxCoO3−δ

S Zhang, G Galli - Chemistry of Materials, 2024 - ACS Publications
Metal–insulator transitions occurring in several transition metal oxides (TMOs) can be used
to realize energy-efficient resistive switching devices, which in turn can be utilized as basic …

Determining the oxygen stoichiometry of cobaltite thin films

S Zhang, IT Chiu, MH Lee, B Gunn, M Feng… - Chemistry of …, 2022 - ACS Publications
Transition metal oxides (TMOs) are promising materials to realize low-power neuromorphic
devices. Their physical properties critically depend on their oxygen vacancy concentration …

Revisiting the Low-Index Surfaces of LaCoO3 with a Passivation Strategy

C Zheng, H Wang, D Wu, J Xu, Z Hu - The Journal of Physical …, 2023 - ACS Publications
A proper modeling is essential for calculating the surface properties of complex oxides, for
example, perovskite oxides. Many studies have shown that traditional selections of slab …

Moderate molecular recognitions on ZnO m-plane and their selective capture/release of bio-related phosphoric acids

E Kanao, K Nakano, R Kamei, T Hosomi… - Nanoscale …, 2022 - pubs.rsc.org
Herein, we explore the hidden molecular recognition abilities of ZnO nanowires uniformly
grown on the inner surface of an open tubular fused silica capillary via liquid …