The development of nanoporous gallium nitride (NP-GaN) has widened the material
properties and applications in third-generation semiconductor areas. NP-GaN has been …

The photoinduced entropy of InGaN/GaN pin nanowires was investigated using temperature-
dependent (6–290 K) photoluminescence. We also analyzed the photocarrier dynamics in …

This paper reports a comprehensive analysis of the origin of the electroluminescence (EL)
peaks and of the thermal droop in UV-B AlGaN-based LEDs. By carrying out spectral …

The growth of semi-polar (112) GaN/InGaN multiple-quantum-well (MQW) co-axial
heterostructure shells around m-axial GaN core nanowires on a Si substrate using MOCVD …

Here, we have demonstrated strong size dependency of quasi-equilibrium and
nonequilibrium carrier and photon dynamics in InGaN/GaN single nanowalls using …

In this study, we examine thermodynamic photoinduced disorder in AlGaN nanowires
through their steady-state and transient photoluminescence properties. We correlate the …

GaN‐based optoelectronic devices including light‐emitting diodes and lasers realized with
quantum‐confined nanostructures, revolutionized the solid‐state lighting. Excited‐state …

Here, we present an efficient 1D model to describe carrier confinement in GaN/InGaN/GaN
and AlGaN/GaN/AlGaN core–shell nanostructures (CSNs) within the effective mass …

Quantum dot (QD) is slated to play a significant role in quantum technologies through its
usage as a single-photon source. It also has promising applications as efficient light emitters …

Here, we show that a nanosecond electrical pulsed-bias actuation induces a chirp in the
emission spectra of strained InGaN quantum well light emitting diodes (LEDs) that can be …