Wurtzite and fluorite ferroelectric materials for electronic memory
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …
continued research interest since their discovery more than 100 years ago. The …
New-generation ferroelectric AlScN materials
Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …
polarization states by external electric field in nonvolatile manner. However, complementary …
Role of Defects in the Breakdown Phenomenon of Al1–xScxN: From Ferroelectric to Filamentary Resistive Switching
Aluminum scandium nitride (Al1–x Sc x N), with its large remanent polarization, is an
attractive material for high-density ferroelectric random-access memories. However, the …
attractive material for high-density ferroelectric random-access memories. However, the …
Scandium-doped aluminum nitride for acoustic wave resonators, filters, and ferroelectric memory applications
Scandium-doped aluminum nitride (AlScN) has generated great research interest owing to
its unique properties. The wurtzite-structure AlScN is compatible with the complementary …
its unique properties. The wurtzite-structure AlScN is compatible with the complementary …
Leakage Mechanism and Cycling Behavior of Ferroelectric Al0.7Sc0.3N
Ferroelectric scandium-doped aluminum nitride (Al1-xScxN) is of considerable research
interest because of its superior ferroelectricity. Studies indicate that Al1-xScxN may suffer …
interest because of its superior ferroelectricity. Studies indicate that Al1-xScxN may suffer …
[HTML][HTML] Temperature-Dependent Ferroelectric Behaviors of AlScN-Based Ferroelectric Capacitors with a Thin HfO2 Interlayer for Improved Endurance and Leakage …
HJ Joo, SS Yoon, SY Oh, Y Lim, GH Lee, G Yoo - Electronics, 2024 - mdpi.com
The ferroelectric switching behavior of a metal–ferroelectric AlScN–HfO2 interlayer–metal
(MFIM) capacitor was investigated at variable temperatures and compared with an MFM …
(MFIM) capacitor was investigated at variable temperatures and compared with an MFM …
Demonstration of 10 nm Ferroelectric Al0.7Sc0.3N-Based Capacitors for Enabling Selector-Free Memory Array
In this work, 10 nm scandium-doped aluminum nitride (AlScN) capacitors are demonstrated
for the construction of the selector-free memory array application. The 10 nm Al0. 7Sc0. 3N …
for the construction of the selector-free memory array application. The 10 nm Al0. 7Sc0. 3N …
[HTML][HTML] Aluminum-Nitride-Based Semiconductors: Growth Processes, Ferroelectric Properties, and Performance Enhancements
L Wang, J Cheng, K Qu, Q Zhu, B Tian, Z Yang - Inorganics, 2025 - mdpi.com
Aluminum nitride (AlN)-based ferroelectric films offer significant advantages, including
compatibility with CMOS back-end processes, potential for sustainable miniaturization, and …
compatibility with CMOS back-end processes, potential for sustainable miniaturization, and …
In-wafer stress-dependent leakage current in ferroelectric scandium-doped aluminum nitride
Recently, the discovery of ferroelectricity in scandium-doped aluminum nitride (Al 1-x Sc x N)
makes it a promising candidate to be used for next-generation ferroelectric memory …
makes it a promising candidate to be used for next-generation ferroelectric memory …
Ferroelectric AlScN thin films with enhanced polarization and low leakage enabled by high-power impulse magnetron sputtering
The demand for efficient data processing motivates a shift toward in-memory computing
architectures. Ferroelectric materials, particularly AlScN, show great promise for next …
architectures. Ferroelectric materials, particularly AlScN, show great promise for next …