Methods to extract trap densities at high-permittivity (k) dielectric/III-V semiconductor
interfaces and their distribution in the semiconductor band gap are compared. The …

Bandgap engineering of graphene is an essential step toward employing graphene in
electronic and sensing applications. Recently, graphene nanoribbons (GNRs) were used to …

We experimentally demonstrate back-end-of-the-line (BEOL) compatible (<; 250° C thermal
budget) 1% tungsten (W)-doped amorphous In 2 O 3 (IWO) back-gate field-effect transistor …

We report on the electrical characteristics of HfO 2 and HfO 2/Al 2 O 3 gate dielectrics
deposited on n-In 0.53 Ga 0.47 As by atomic layer deposition, after in-situ hydrogen or …

Charge storage characteristics of ultra-small Pt nanoparticle embedded devices were
characterized by capacitance-voltage measurements. A unique tilt target sputtering …

HfO 2 was deposited on n-and p-type In 0.53 Ga 0.47 As by chemical beam deposition.
Interface trap densities (D it) and their energy level distribution were quantified using the …

A deep understanding of the interface states in metal–oxide–semiconductor (MOS)
structures is the premise of improving the gate stack quality, which sets the foundation for …

To address the integration of the high-mobility Ge/III-V MOSFET, a common gate stack
(CGS) solution is proposed for the first time and demonstrated on Ge and InGaAs channels …

We investigated the passivation of In 0.53 Ga 0.47 As (001) surface by molecular beam
epitaxy techniques. After growth of strained In 0.53 Ga 0.47 As on InP (001) substrate, HfO …

A ternary alloy rare-earth scandate,(Y 0.6 Sc 0.4) 2 O 3, is demonstrated as a high-k
dielectric insulator for β-Ga 2 O 3 MOS devices.(Y 0.6 Sc 0.4) 2 O 3/β-Ga 2 O 3 (010) MOS …