Wide bandgap semiconductor technology is gaining widespread acceptance in the area of
high-power and high-temperature power electronics. Gallium nitride (GaN) not only has a …

Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently
employed for the fabrication of high-efficiency power electronic devices, such as diodes and …

Logic circuits capable of operating at high temperatures can alleviate expensive heat-
sinking and thermal-management requirements of modern electronics and are enabling for …

Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are
excellent materials for the next generation of high-power and high-frequency electronic …

Low interface trap density and high channel mobility on nonpolar faces of 4H-SiC, such as
the (11 [2̅] 0) a-face, are of fundamental importance in the understanding of SiC MOS …

Wide bandgap semiconductors promise devices with performances not achievable using
silicon technology. Among them, silicon carbide (SiC) is considered the top-notch material …

A comprehensive overview of the advancements, challenges, and prospects of silicon
carbide (SiC) complementary metal-oxide-semiconductor (CMOS) technology is presented …

Abstract 4H‐SiC MISFETs with nitrogen‐containing insulators have been fabricated and
characterized. Several techniques have been explored to incorporate nitrogen in the gate …

Abstract Effects of oxidation and nitric oxide (NO) post-oxidation annealing (POA) processes
on the gate oxide integrity on 4H-SiC are investigated. Interface state density, flatband …

Detailed investigations on the pre-oxidation nitrogen implantation process for the
improvement of channel mobility in 4H-SiC MOSFETs are reported. Comparisons with …