We report on the determination of the dielectric functions of Bi 2 Se 3 thin films and bulk
material. The Bi 2 Se 3 thin films with thicknesses ranging from 3–54 quintuple layers (QL) …

Bi2Se3 initially emerged as a particularly promising host of topological physics. However, in
actual materials, several issues have been uncovered including strong surface band …

We present a systematic theoretical study of bismuth selenide electronic structure in the
presence of spin-orbit interaction. It is confirmed that the inversion of Bi pz and Se pz states …

Non‐invasive local probes are needed to characterize bulk defects in binary and ternary
chalcogenides. These defects contribute to the non‐ideal behavior of topological insulators …

We present STM/STS, ARPES and magnetotransport studies of the surface topography and
electronic structure of pristine Bi2Se3 in comparison to Bi1. 96Mg0. 04Se3 and Bi1. 98Fe0 …

Circular photogalvanic currents are a promising approach for spin-optoelectronics. To date,
such currents have been induced in topological insulator flakes or extended films. It is not …

Using scanning tunneling spectroscopy and theoretical simulations we have studied the
effects of nitrogen gas exposure on the electronic density of states of Bi 2 Se 3, a well …

In this Rapid Communication we present scanning tunneling microscopy of a large Bi 2 Se 3
crystal with superconducting PbBi islands deposited on the surface. Local density of states …

We report the results of scanning tunneling microscopy experiments using iron-coated
tungsten tips and current-carrying bismuth selenide (Bi Se) samples. Asymmetry in tunneling …

Using scanning tunneling spectroscopy we have studied the effects of nitrogen gas
exposure on the bismuth selenide density of states. We observe a shift in the Dirac point …