This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …

Gallium oxide has attracted a considerable interest as a functional material for various
applications. This review summarizes the research work carried out in the field of gallium …

The rapid development of bulk β-Ga 2 O 3 crystals has attracted much attention to their use
as ultra-wide bandgap materials for next-generation power devices owing to its large …

Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and
power devices, supporting a future energy-saving society. Here we present evidence of p …

A remarkable improvement in the conductivity of grown nitrogen-doped p-type β-Ga 2 O 3
films was successfully achieved via the thermal oxidation of GaN in N 2 O ambient at 1100° …

Gallium oxide (Ga2O3) is a promising wide-band-gap semiconductor material for UV optical
detectors and high-power transistor applications. The fabrication of p-type Ga2O3 is a key …

We predict three Ga2O3 polymorphs with P21/c or Pnma symmetry. The formation energies
of P21/c Ga2O3, Pnma-I Ga2O3, and Pnma-II Ga2O3 are 57 meV per atom, 51 meV per …

This work presents the experimental and theoretical insights into the structural and optical
properties of tin (Sn)-doped β-Ga 2 O 3. Sn-doped β-Ga 2 O 3 films were fabricated using …

Ga 2 O 3 exhibits great potential for applications in solar-blind ultraviolet photo detector,
high-power electronic devices and solid-state light-emitting due to its ultra-wide band gap …

A systematic study using density functional theory has been performed for β-Ga2O3 doped
with non-metal elements X (X= C, N, F, Si, P, S, Cl, Se, Br, and I) to evaluate the effect of …