Performance improvement of 1T DRAM by raised source and drain engineering
MHR Ansari, S Cho - IEEE Transactions on Electron Devices, 2021 - ieeexplore.ieee.org
In this work, a double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET)
with raised source and drain (RSD) regions is utilized for application of one-transistor (1T) …
with raised source and drain (RSD) regions is utilized for application of one-transistor (1T) …