In this work, a unified numerical model is used to determine the melting thresholds and to
investigate the early stages of melting of several crystalline semiconductors (Si, Ge, GaAs …

Предложен способ формирования краёв чипов в целях уменьшения зазора между
чипами в мозаичных фотоприёмных модулях, чувствительных в инфракрасном …

In situ real‐time reflectivity measurements have been made in GaAs under ArF excimer laser
(λ= 193 nm) irradiation. The results obtained provide a reflectivity value for the solid material …

Estimations of GaAs surface temperature during laser irradiation, using recently published
optical data and their temperature dependence for laser fluences around the melting …

A method is proposed to shape the edges of chips in order to reduce the gap between chips
in infrared-sensitive mosaic photodetectors modules. The method involves laser scribing of …

We have used high-resolution X-ray diffraction and Raman spectroscopy to investigate
structural modifications inside and outside the focal region of Si-implanted GaAs samples …

We have studied the soft laser sputtering of (100) GaAs with 337 nm photons, starting from
the threshold for particle emission (a few tens of mJ/cm2) to some 300 mJ/cm2 fluences …

It is reported on the passivation of the mirror facets, opened in the air, of ridge waveguide
InGaAs/GaAs/AlGaAs single quantum well (λ= 980 nm) laser diodes. The passivation …

We have studied the pulsed laser sputtering of (100) Ga1− x Al x As (x= 0.545) surface with
337 nm photons, starting from the threshold for particle emission (a few tens of mJ/cm2) up …

Cell-surface interactions are fundamental aspects to understand the role of surface
chemistry and topography of biomaterials. If cells differ in their response to topographic …