Gallium nitride as an electromechanical material
Gallium nitride (GaN) is a wide bandgap semiconductor material and is the most popular
material after silicon in the semiconductor industry. The prime movers behind this trend are …
material after silicon in the semiconductor industry. The prime movers behind this trend are …
Metal-Free High-Overtone Bulk Acoustic Resonators with Outstanding Acoustic Match and Thermal Stability
J Cheng, Z Peng, W Zhang… - IEEE Electron Device …, 2023 - ieeexplore.ieee.org
This letter presents a novel type of epitaxial gallium nitride (GaN) on semi-insulating silicon
carbide (4H-SiC)-based high-overtone bulk acoustic resonators (HBARs) that eliminates the …
carbide (4H-SiC)-based high-overtone bulk acoustic resonators (HBARs) that eliminates the …
Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform
This article presents a comprehensive study of the performance of Sezawa surface acoustic
wave (SAW) devices in SweGaN QuanFINE ultrathin GaN/SiC platform, reaching …
wave (SAW) devices in SweGaN QuanFINE ultrathin GaN/SiC platform, reaching …
Amplification and directional emission of surface acoustic waves by a two-dimensional electron gas
Amplification of surface acoustic waves (SAWs) by electron drift in a two-dimensional
electron gas (2DEG) is analyzed analytically and confirmed experimentally. Calculations …
electron gas (2DEG) is analyzed analytically and confirmed experimentally. Calculations …
Study of Acoustic Emission from the Gate of Gallium Nitride High Electron Mobility Transistors
BK Paszkiewicz, B Paszkiewicz, A Dziedzic - Electronics, 2024 - mdpi.com
Nitrides are the leading semiconductor material used for the fabrication of high electron
mobility transistors (HEMTs). They exhibit piezoelectric properties, which, coupled with their …
mobility transistors (HEMTs). They exhibit piezoelectric properties, which, coupled with their …
Surface acoustic waves in semi-insulating Fe-doped GaN films grown by hydride vapor phase epitaxy
Y Fan, Z Liu, G Xu, H Zhong, Z Huang, Y Zhang… - Applied Physics …, 2014 - pubs.aip.org
The propagation properties of surface acoustic waves (SAWs) in semi-insulating Fe-doped
GaN films grown on sapphire substrates by hydride vapor phase epitaxy are investigated …
GaN films grown on sapphire substrates by hydride vapor phase epitaxy are investigated …
Bias dependence of gallium nitride micro-electro-mechanical systems actuation using a two-dimensional electron gas
The piezoelectric actuation of a micro-electro-mechanical system (MEMS) resonator based
on an AlGaN/GaN heterostructure is studied under various bias conditions. Using an …
on an AlGaN/GaN heterostructure is studied under various bias conditions. Using an …
Electrically driven nanoscale acoustic source based on a two-dimensional electron gas
Acoustic emission by a modulated two-dimensional electron gas (2DEG) is studied
analytically, numerically, and experimentally. Optical reflectance measurements provide the …
analytically, numerically, and experimentally. Optical reflectance measurements provide the …
Monolithically integrated MEMS resonators and oscillators in standard ic technology
BWA Bahr - 2016 - dspace.mit.edu
Frequency sources and high quality filters based on mechanical resonators are essential
building blocks for communication systems as well as analog and digital electronics. Driven …
building blocks for communication systems as well as analog and digital electronics. Driven …
Active Acoustic Emission From a Two-dimensional Electron Gas.
L Shao - 2014 - deepblue.lib.umich.edu
This work examines the performance and fundamental operating principles of an active
acoustic emitter based on an AlGaN/GaN high electron mobility transistor (HEMT). Strong …
acoustic emitter based on an AlGaN/GaN high electron mobility transistor (HEMT). Strong …