Group-III-nitride optical devices are conventionally important for displays and solid-state
lighting, and recently have garnered much interest in the field of visible-light communication …

As a wide band gap semiconductor, gallium nitride (GaN) has high breakdown voltage,
excellent structural stability and mechanical properties, giving it unique advantages in …

Realization of fully solid-state white light emitting devices requires high efficiency blue,
green, and red emitters. However, challenges remain in boosting the low quantum efficiency …

Monolithic 3-D integration has emerged as a promising technological solution for traditional
transistor scaling limitations and interconnection bottleneck. The challenge we must …

GaN-based high electron mobility transistors (HEMT) on Si (111) substrates have large
potential for applications in the 5G telecommunication field. However, for this potential to be …

In this work, we demonstrate the potential of a gallium nitride (GaN)-based visible-blind
ultraviolet (UV) photodetector (PD) on a commercially viable 150-mm Si wafer. The influence …

The accurate determination of compositional fluctuations is pivotal in understanding their
role in the reduction of efficiency in high indium content In x Ga 1–x N light emitting diodes …

We present an overview of the atomic structure of extended defects in wurtzite III-nitrides,
focusing on GaN heterostructures applicable to light-emitting optoelectronic devices (LEDs …

Integration of silicon-complementary metal oxide-semiconductor (Si-CMOS) and III-V
compound semiconductors (with device structures of either InGaAs HEMT, AlGaInP LED …

Surface-enhanced Raman scattering (SERS) is a technique that can deliver label-free, real-
time, and multiplex detection of target molecules. However, the development of this potential …