Seed‐assisted growth of cast‐mono silicon for photovoltaic application: challenges and strategies

P Wang, C Cui, D Yang, X Yu - Solar Rrl, 2020 - Wiley Online Library
Silicon has dominated the photovoltaic material market for a few decades. In contrast to
perfectly crystallized Czochralski (CZ) silicon, casting multi‐crystalline silicon attracts much …

Growth and Defects in Cast‐Mono Silicon for Solar Cells: A Review

J Huang, S Yuan, X Yu, D Yang - physica status solidi (a), 2023 - Wiley Online Library
Cast‐mono silicon (CM‐Si) is a promising substrate to fabricate cost‐effective photovoltaic
(PV) wafers used for solar cells with higher efficiency compared with conventional cast …

Fiber crystal growth from the melt

P Rudolph, T Fukuda - Crystal Research and Technology …, 1999 - Wiley Online Library
The literature on melt growth of single crystalline fibers is reviewed. The paper introduces in
the characteristic features and wide field of advanced applications of micro single crystals in …

Seed-assisted growth of high-quality multi-crystalline silicon in directional solidification

D Zhu, L Ming, M Huang, Z Zhang, X Huang - Journal of crystal growth, 2014 - Elsevier
An approach to grain control using seed-assisted growth in directional solidification (DS) is
reported in this paper. Proper multi-crystalline silicon seeds at the bottom of the crucible …

Influence of helium gas flow under the retort bottom to control the impurities in grown mc-Si ingot by DS process for photovoltaic application: Numerical simulation

S Sugunraj, P Karuppasamy, T Keerthivasan… - Journal of Crystal …, 2023 - Elsevier
The quality improvement of the mc-Si ingot is achieved by numerical simulation using the
finite volume method. We have done the numerical simulation on a 2D symmetric Directional …

Application of a new grain boundary technology for quasi-single crystalline silicon ingots

S Tang, X Qi, C Chang, Q Wang, L Liu - Journal of Crystal Growth, 2023 - Elsevier
A new functional grain boundary group (FGBG) technology was employed to generate quasi-
single crystalline silicon ingots with a high single crystalline area ratio. Fabrication of the …

Data-driven optimization and experimental validation for the lab-scale mono-like silicon ingot growth by directional solidification

X Liu, Y Dang, H Tanaka, Y Fukuda, K Kutsukake… - ACS …, 2022 - ACS Publications
The casting mono-like silicon (Si) grown by directional solidification (DS) is promising for
high-efficiency solar cells. However, high dislocation clusters around the top region are still …

Improvement of DS grown Mc-Si Ingot for PV application by reducing the thickness of the bottom heat exchanger block: numerical investigation

S Sekar, A Gurusamy, S Manikkam, R Perumalsamy - Silicon, 2023 - Springer
This work presents the numerical investigation of manufacturing the multi-crystalline silicon
(mc-Si) ingots by using a lab-scale directional solidification furnace. Thermal distribution …

Controlling solidification front shape and thermal stress in growing quasi-single-crystal silicon ingots: Process design for seeded directional solidification

L Liu, Q Yu, X Qi, W Zhao, G Zhong - Applied Thermal Engineering, 2015 - Elsevier
To control the solidification front shape and thermal stress in the growing silicon ingot and
reduce the small-grain region at its periphery, a moving insulation partition block was …

Optimization of the controlling recipe in quasi-single crystalline silicon growth using artificial neural network and genetic algorithm

Y Dang, L Liu, Z Li - Journal of Crystal Growth, 2019 - Elsevier
The thermal field in the seeded directional solidification (DS) of quasi-single crystalline
(QSC) silicon needs precise control to preserve the seed and maintain a flat solidification …