Spin and angle resolved photoemission on non-magnetic low-dimensional systems

JH Dil - Journal of Physics: Condensed Matter, 2009 - iopscience.iop.org
The electronic structure of non-magnetic low-dimensional materials can acquire a spin
structure due to the breaking of the inversion symmetry at the surface or interface. This so …

Metallic quantum well states in artificial structures of strongly correlated oxide

K Yoshimatsu, K Horiba, H Kumigashira, T Yoshida… - Science, 2011 - science.org
The quantum confinement of strongly correlated electrons in artificial structures provides a
platform for studying the behavior of correlated Fermi-liquid states in reduced dimensions …

Structure of silicene on a Ag (111) surface studied by reflection high-energy positron diffraction

Y Fukaya, I Mochizuki, M Maekawa, K Wada… - Physical Review B …, 2013 - APS
The structure of silicene fabricated on a Ag (111) surface was determined using reflection
high-energy positron diffraction with a linac-based brightness-enhanced intense positron …

Quantum well states in ultrathin Bi films: Angle-resolved photoemission spectroscopy and first-principles calculations study

T Hirahara, T Nagao, I Matsuda, G Bihlmayer… - Physical Review B …, 2007 - APS
Quantum well states (QWSs) in ultrathin Bi (001) films grown on Si (111)-7× 7 with
thicknesses up to several tens of nanometers were studied by angle-resolved …

Quantum electronic stability and spectroscopy of ultrathin Pb films on

A Mans, JH Dil, A Ettema, HH Weitering - Physical Review B, 2002 - APS
The growth of Pb on Si (111) 7× 7 has been studied with photoelectron spectroscopy. At low
temperature (110 K), Pb grows in a quasi layer-by-layer mode that allows for the direct …

Atomic‐Scale Characterization of Negative Differential Resistance in Ferroelectric Bi2WO6

C Song, H Mao, Y Yang, X Liu, Z Yin… - Advanced Functional …, 2022 - Wiley Online Library
Negative differential resistance (NDR), a quantum nonlinear electron transport process, has
long attracted research interest owing to its intriguing underlying physics and promising …

Coherent electronic fringe structure in incommensurate silver-silicon quantum wells

NJ Speer, SJ Tang, T Miller, TC Chiang - Science, 2006 - science.org
Atomically uniform silver films grown on highly doped n-type Si (111) substrates show fine-
structured electronic fringes near the silicon valence band edge as observed by angle …

[HTML][HTML] Evidence of silicide at the ni/β-si3n4 (0001)/si (111) interface

P Rajak, R Ciancio, A Caretta, S Laterza… - Applied Surface …, 2023 - Elsevier
We present a study of a sub-nanometre interlayer of crystalline silicon nitride at the Ni/Si
interface. We performed transmission electron microscopy measurements complemented by …

Origin of the Anomalous Mass Renormalization in Metallic Quantum Well States of Strongly Correlated Oxide

M Kobayashi, K Yoshimatsu, E Sakai, M Kitamura… - Physical Review Letters, 2015 - APS
In situ angle-resolved photoemission spectroscopy (ARPES) has been performed on SrVO 3
ultrathin films, which show metallic quantum well (QW) states, to unveil the origin of the …

Quantum confinement induced metal-insulator transition in strongly correlated quantum wells of superlattices

ADN James, M Aichhorn, J Laverock - Physical Review Research, 2021 - APS
Dynamical mean-field theory (DMFT) has been employed in conjunction with density
functional theory (DFT+ DMFT) to investigate the metal-insulator transition (MIT) of strongly …