In this work a modification of Terman method for determination of interfacial energy states
located in the forbidden energy gap of the semiconductor (interface states) convenient for …

Capacitance of metal–insulator–Si structures containing high permittivity dielectric exhibits
complicated behaviour when voltage and frequency dependencies are studied. From our …

In this work, multifrequency capacitance–voltage characteristics have been investigated
from 300K to 10K for high-k HfO 2-based 10-nm bulk n-channel FinFETs. The dispersion …

In this work a compact set of analytical methods for determination of the interface state
densities of metal-insulator-silicon structures containing ultrathin dielectrics is constructed …

A quantum-mechanical (QM) model is presented for accumulation gate capacitance of MOS
structures with high-/spl kappa/gate dielectrics. The model incorporates effects due to …

An admittance spectroscopy technique has been developed for the interfaces between
organic monolayers and silicon. The present work involves the development of an effective …

The frequency dependence of the capacitance in accumulation of the metal–Ta 2 O 5/SiO 2–
Si structures was studied in the frequency range from 20 Hz to 1 MHz. The capacitances at …

The influence of process parameters: doping approach, Si surface nitridation ambient (NH 3
and N 2 O), type of the gate (Al and W) and its technology of deposition on the electrical …

The electrical (C–V and I–V) and reliability (constant current stress technique) properties of
RF sputtered 30nm thick Ta2O5 on N-implanted Si have been investigated. The …

Metal–insulator–silicon structures containing Hf-doped Ta2O5 dielectric films sputtered on
rapid thermally nitrided Si are shown to have very good reliability properties. Stress-induced …