In the effort to develop disruptive quantum technologies, germanium is emerging as a
versatile material to realize devices capable of encoding, processing and transmitting …

This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

Holes confined in quantum dots have gained considerable interest in the past few years due
to their potential as spin qubits. Here we demonstrate two-axis control of a spin 3/2 qubit in …

Nanowires are natural one-dimensional channels and offer new opportunities for advanced
electronic quantum transport experiments. We review recent progress on the synthesis of …

Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

Operation speed and coherence time are two core measures for the viability of a qubit.
Strong spin-orbit interaction (SOI) and relatively weak hyperfine interaction make holes in …

We study theoretically the low-energy hole states in Si, Ge, and Ge/Si core/shell nanowires
(NWs). The NW core in our model has a rectangular cross section, the results for a square …

In recent years, hole-spin qubits based on semiconductor quantum dots have advanced at a
rapid pace. We first review the main potential advantages of these hole-spin qubits with …

We propose a setup for universal and electrically controlled quantum information processing
with hole spins in Ge/Si core/shell nanowire quantum dots (NW QDs). Single-qubit gates can …

Hole spins have gained considerable interest in the past few years due to their potential for
fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so-far …