Noisy intermediate-scale quantum computers

B Cheng, XH Deng, X Gu, Y He, G Hu, P Huang, J Li… - Frontiers of …, 2023 - Springer
Quantum computers have made extraordinary progress over the past decade, and
significant milestones have been achieved along the path of pursuing universal fault-tolerant …

Qubits made by advanced semiconductor manufacturing

AMJ Zwerver, T Krähenmann, TF Watson… - Nature …, 2022 - nature.com
Full-scale quantum computers require the integration of millions of qubits, and the potential
of using industrial semiconductor manufacturing to meet this need has driven the …

A flexible design platform for Si/SiGe exchange-only qubits with low disorder

W Ha, SD Ha, MD Choi, Y Tang, AE Schmitz… - Nano Letters, 2021 - ACS Publications
Spin-based silicon quantum dots are an attractive qubit technology for quantum information
processing with respect to coherence time, control, and engineering. Here we present an …

Low charge noise quantum dots with industrial CMOS manufacturing

A Elsayed, M Shehata, C Godfrin, S Kubicek… - arXiv preprint arXiv …, 2022 - arxiv.org
Silicon spin qubits are among the most promising candidates for large scale quantum
computers, due to their excellent coherence and compatibility with CMOS technology for …

Non-symmetric Pauli spin blockade in a silicon double quantum dot

T Lundberg, DJ Ibberson, J Li, L Hutin… - npj Quantum …, 2024 - nature.com
Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to
their potential for large-scale quantum computing. Readout of such spin qubits is done most …

Pipeline quantum processor architecture for silicon spin qubits

SM Patomäki, MF Gonzalez-Zalba, MA Fogarty… - npj Quantum …, 2024 - nature.com
We propose a quantum processor architecture, the qubit 'pipeline', in which run-time scales
additively as functions of circuit depth and run repetitions. Run-time control is applied …

Characterization and modeling of quantum dot behavior in FDSOI devices

SP Tripathi, S Bonen, A Bharadwaj… - IEEE Journal of the …, 2022 - ieeexplore.ieee.org
A compact analytical model is proposed along with a parameter extraction methodology to
accurately capture the steady-state (DC) sequential tunneling current observed in the …

High mobility SiMOSFETs fabricated in a full 300 mm CMOS process

TN Camenzind, A Elsayed… - Materials for …, 2021 - iopscience.iop.org
The quality of the semiconductor–barrier interface plays a pivotal role in the demonstration
of high quality reproducible quantum dots for quantum information processing. In this work …

Linking room-and low-temperature electrical performance of MOS gate stacks for cryogenic applications

KH Kao, C Godfrin, A Elsayed, R Li… - IEEE Electron …, 2022 - ieeexplore.ieee.org
Based on MOSFETs with four different gate stacks, we extract the oxide trap density and
transconductance from the low frequency noise and DC transfer characteristics at room …

Silicon edge-dot architecture for quantum computing with global control and integrated trimming

MA Fogarty - arXiv preprint arXiv:2208.09172, 2022 - arxiv.org
A scalable quantum information processing architecture based on silicon metal-oxide-
semiconductor technology is presented, combining quantum hardware elements from planar …