Recent progress on the effects of impurities and defects on the properties of Ga 2 O 3
Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
Structure and vibrational properties of the dominant OH center in β-Ga2O3
Hydrogen has a strong influence on the electrical properties of transparent conducting
oxides where it can give rise to shallow donors and can passivate deep compensating …
oxides where it can give rise to shallow donors and can passivate deep compensating …
Hydrogen centers in β-Ga2O3: Infrared spectroscopy and density functional theory
Abstract β-Ga 2 O 3 is a transparent conducting oxide with a wide bandgap (4.9 eV) whose
properties are generating widespread interest. It has been found that hydrogen can play a …
properties are generating widespread interest. It has been found that hydrogen can play a …
Editors' Choice—Vibrational Properties of Oxygen-Hydrogen Centers in H+-and D+-Implanted Ga2O3
A Portoff, A Venzie, Y Qin, M Stavola… - ECS Journal of Solid …, 2020 - iopscience.iop.org
The ion implantation of H+ and D+ into Ga 2 O 3 produces several O–H and O–D centers
that have been investigated by vibrational spectroscopy. These defects include the dominant …
that have been investigated by vibrational spectroscopy. These defects include the dominant …
[HTML][HTML] Determination of dielectric axes and transition moment directions in β-Ga2O3 from the polarization dependence of vibrational spectra
β-Ga 2 O 3 is a promising ultrawide bandgap semiconductor for high power and extreme
environment applications. The dominant O—H center in Ga 2 O 3 has been assigned to a …
environment applications. The dominant O—H center in Ga 2 O 3 has been assigned to a …
Extraction of migration energies and role of implant damage on thermal stability of deuterium in Ga2O3
Deuterium was incorporated in bulk single crystal β-Ga 2 O 3 samples by either ion
implantation (100 keV, 10 15 cm− 2) or plasma exposure (up to 270 C, 30 mins) of single …
implantation (100 keV, 10 15 cm− 2) or plasma exposure (up to 270 C, 30 mins) of single …
[HTML][HTML] Hydrogen density-of-states distribution in β-Ga2O3
NH Nickel, K Geilert - Journal of Applied Physics, 2021 - pubs.aip.org
Hydrogen bonding in β-Ga 2 O 2 is investigated using hydrogen effusion measurements.
The samples were grown by plasma-assisted pulsed laser deposition. With increasing …
The samples were grown by plasma-assisted pulsed laser deposition. With increasing …
[图书][B] Hydrogen centers in semiconductor oxides In2O3 and Ga2O3 studied by FTIR spectroscopy
Y Qin - 2019 - search.proquest.com
Hydrogen is found to be an n-type dopant in In 2 O 3 that gives rise to unintentional
conductivity. An infrared (IR) absorption line observed at 3306 cm− 1 is assigned to the H i+ …
conductivity. An infrared (IR) absorption line observed at 3306 cm− 1 is assigned to the H i+ …
Charged muonium diffusion in indium oxide and other transparent conducting oxides
BB Baker - 2015 - ttu-ir.tdl.org
Transparent conducting oxides (TCO) are a class of semiconducting materials that are
transparent to visible light, commonly used as transparent electrodes in semiconductor …
transparent to visible light, commonly used as transparent electrodes in semiconductor …