[图书][B] Computational Electronics: semiclassical and quantum device modeling and simulation

D Vasileska, SM Goodnick, G Klimeck - 2017 - books.google.com
Starting with the simplest semiclassical approaches and ending with the description of
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …

The NEEShub cyberinfrastructure for earthquake engineering

TJ Hacker, R Eigenmann, S Bagchi… - … in Science & …, 2011 - ieeexplore.ieee.org
The US Network for Earthquake Engineering Simulation (NEES) operates a shared network
of civil engineering experimental facilities aimed at facilitating research on mitigating …

Advancing earthquake engineering research through cyberinfrastructure

T Hacker, R Eigenmann, E Rathje - Journal of Structural …, 2013 - ascelibrary.org
This paper describes the cyberinfrastructure (CI) of the George E. Brown, Jr. Network for
Earthquake Engineering Simulation (NEES) and examines the evidence that this …

Low rank approximation method for efficient Green's function calculation of dissipative quantum transport

L Zeng, Y He, M Povolotskyi, XY Liu… - Journal of Applied …, 2013 - pubs.aip.org
In this work, the low rank approximation concept is extended to the non-equilibrium Green's
function (NEGF) method to achieve a very efficient approximated algorithm for coherent and …

Effect of temperature on the characteristics of silicon nanowire transistor

Y Hashim, O Sidek - Journal of nanoscience and …, 2012 - ingentaconnect.com
This paper presents the temperature characteristics of silicon nanowire transistors (SiNWTs)
and examines the effect of temperature on transfer characteristics, threshold voltage, I ON/I …

Atomistic modeling of realistically extended semiconductor devices with NEMO and OMEN

G Klimeck, M Luisier - Computing in Science & Engineering, 2010 - ieeexplore.ieee.org
Researchers have continually developed the Nanoelectronic Modeling (NEMO) toolset over
the past 15 years to provide insight into nanoscale semiconductor devices that are …

Quantum atomistic simulations of nanoelectronic devices using QuADS

S Ahmed, K Yalavarthi, V Gaddipati, A Muntahi… - Nano-Electronic Devices …, 2011 - Springer
As semiconductor devices shrink into the nanoscale regime and new classes of
nanodevices emerge, device performance is increasingly being dominated by the …

Atomistic modeling of nonpolar m-plane InGaN disk-in-wire light emitters

MRK Nishat, SM Alqahtani, VU Chimalgi… - Journal of …, 2017 - Springer
InGaN heterostructures, when grown along the polar c-plane orientation, are prone to large
internal polarization fields, which significantly affect their electronic bandstructure and …

Multimillion-atom modeling of InAs/GaAs quantum dots: interplay of geometry, quantization, atomicity, strain, and linear and quadratic polarization fields

S Ahmed, S Sundaresan, H Ryu, M Usman - Journal of Computational …, 2015 - Springer
Electronic structure and optical properties of self-assembled quantum dots strongly depend
on an intricate interplay of the quantum mechanical size quantization and the atomistic built …

Optimization of resistance load in 4T-static random-access memory cell based on silicon nanowire transistor

Y Hashim - Journal of nanoscience and nanotechnology, 2018 - ingentaconnect.com
This study explores optimization of resistance load (R-Load) of four silicon nanowire
transistor (SiNWT)-based static random-access memory (SRAM) cell. Noise margins and …