Resistive switching (RS) is an interesting property shown by some materials systems that,
especially during the last decade, has gained a lot of interest for the fabrication of electronic …

This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

The resistive switching effect in memristors typically stems from the formation and rupture of
localized conductive filament paths, and HfO2 has been accepted as one of the most …

Thin dielectric films are essential components of most micro‐and nanoelectronic devices,
and they have played a key role in the huge development that the semiconductor industry …

The wake-up effect which is observed in ferroelectric hafnium oxide is investigated in yttrium
doped hafnium oxide prepared by chemical solution deposition. It can be shown that not the …

Graphene and related materials (GRMs) are promising candidates for the fabrication of
resistive random access memories (RRAMs). Here, this emerging field is analyzed …

Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for
next generation information storage, leading to great performance and fabrication-friendly …

The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the
expectations of developing competitive ferroelectric non-volatile memory devices. To date, it …

Reversible chemical and structural changes induced by ionic motion and reaction in
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …

We propose a model describing the operations of hafnium oxide-based resistive random
access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport …