We discuss the challenges of light‐emitting diodes in view of their application to solid‐state
lighting. The requirement is to at least displace the quite efficient fluorescent, sodium, and …

Semiconductor structures used for fundamental or device applications most often
incorporate alloy materials. In “usual” or “common” III–V alloys, based on the InGaAsP or …

High-power flip-chip light-emitting diodes (FCLEDs) suffer from low efficiencies because of
poor p-type reflective ohmic contact and severe current crowding. Here, we show that it is …

Physical mechanisms causing the efficiency droop in InGaN/GaN blue light-emitting diodes
and remedies proposed for droop mitigation are classified and reviewed. Droop …

The emergence of efficient solid state light emitters was the result of the remarkable
breakthroughs in the late 1980s and early 1990s in GaN-based materials and light emitting …

Random alloy fluctuations significantly affect the electronic, optical, and transport properties
of (In, Ga) N-based optoelectronic devices. Transport calculations accounting for alloy …

The efficiency of light emitting diodes (LEDs) remains a topic of great contemporary interest
due to their potential to reduce the amount of energy consumed in lighting. The current …

In the past years, light-emitting diodes (LED) made of GaN and its related ternary
compounds with indium and aluminium have become an enabling technology in all areas of …

Abstract Band alignment of InGaN/GaN multiple quantum wells (MQW) light-emitting diode
was investigated by regulating the widths of well and barrier. Novel structure of InGaN/GaN …

As the field of state-of-the-art displays continues to evolve, micro light-emitting diodes (Micro-
LEDs) with their diminutive pixel size and exceptional efficiency are emerging as a pivotal …