We report on the impact of γ radiation (0–500 Gy) on triple-cation Cs0. 15MA0. 10FA0. 75Pb
(Br0. 17I0. 83) 3 perovskite solar cells. A set of experiments was designed to reveal the …

Semiconductor-based mid-wave infrared photon detectors that functionalize space-based
imaging systems are susceptible to both cumulative ionization and displacement damage …

An examination of the collective results from recent experiments quantifying the performance
degradation rates of III-V-based, unipolar barrier infrared detectors with various designs and …

The degradation of the minority-carrier recombination lifetime of various III–V n B n and II–VI
HgCdTe midwave-infrared space detector materials under stepwise 63-MeV proton …

With the increasing maturity of material preparation and device process technology,
InAs/GaSb type-II superlattices (T2SLs) have become a crucial material system for a new …

Mid-wave infrared, nBn detectors remain limited by diffusion current generated in the
absorber region even when defect concentrations are elevated. In contrast, defect-limited …

High-energy (> 40 MeV) protons are commonly used to characterize radiation tolerance of
space electronics against damage caused by energy transfer to the nuclei and electrons of …

Recent investigations demonstrated that III-V-based nBn infrared detectors typically
experience relatively significant performance degradation under 63 MeV proton irradiation …

Ongoing studies to characterize and improve the radiation tolerance of the quantum
efficiency (QE) in III-V-based, unipolar barrier infrared detectors, such as nBn's, require …

In this work, we investigated the effect of proton irradiation on the performance of long
wavelength infrared InAs/GaSb photodiodes (λ c= 10.2 μm), based on the complementary …