N-polar GaN epitaxy and high electron mobility transistors
This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …
electronics that aims at addressing the device scaling challenges faced by GaN high …
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05
Nonalloyed ohmic contacts regrown by molecular beam epitaxy were made on
InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs). Transmission-line-method …
InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs). Transmission-line-method …
N-polar GaN: Epitaxy, properties, and device applications
Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …
for high power switching, high power RF and lighting applications. In c-direction, depending …
Reverse leakage analysis for as-grown and regrown vertical GaN-on-GaN Schottky barrier diodes
Vertical GaN-on-GaN Schottky barrier diodes based on as-grown and regrown samples
were fabricated to investigate the effects of the etch-then-regrow process on device …
were fabricated to investigate the effects of the etch-then-regrow process on device …
Degradation of Ka-band GaN LNA under high-input power stress: Experimental and theoretical insights
X Tong, R Wang, S Zhang, J Xu… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
A 23-30-GHz gallium nitride (GaN) low-noise amplifier (LNA) with a noise figure (NF) of 0.87-
1.51 dB is presented in this article. This LNA was fabricated with 100-nm gate-length GaN …
1.51 dB is presented in this article. This LNA was fabricated with 100-nm gate-length GaN …
Reliability issues of GaN based high voltage power devices
J Wuerfl, E Bahat-Treidel, F Brunner, E Cho… - Microelectronics …, 2011 - Elsevier
GaN based power devices for high efficiency switching applications in modern power
electronics are rapidly moving into the focus of world wide research and development …
electronics are rapidly moving into the focus of world wide research and development …
Enhancement-mode AlGaN/GaN nanowire channel high electron mobility transistor with fluorine plasma treatment by ICP
This letter reports on a novel enhancement-mode (E-mode) AlGaN/GaN high electron
mobility transistor (HEMT) that combines nanowire channel and fluorine plasma treatment …
mobility transistor (HEMT) that combines nanowire channel and fluorine plasma treatment …
[HTML][HTML] Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics
M Yoshino, Y Ando, M Deki, T Toyabe, K Kuriyama… - Materials, 2019 - mdpi.com
A normally-off GaN double-implanted vertical MOSFET (DMOSFET) with an atomic layer
deposition (ALD)-Al2O3 gate dielectric film on a free-standing GaN substrate fabricated by …
deposition (ALD)-Al2O3 gate dielectric film on a free-standing GaN substrate fabricated by …
[HTML][HTML] Improving breakdown voltage and threshold voltage stability by clamping channel potential for short-channel power p-GaN HEMTs
H Wang, Y Shi, Y Xin, C Liu, G Lu, Y Huang - Micromachines, 2022 - mdpi.com
This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to
improve breakdown voltage (BV) and threshold voltage (V TH) stability. The clamping …
improve breakdown voltage (BV) and threshold voltage (V TH) stability. The clamping …