The electrical resistance of interconnect wires increases with decreasing size, causing
signal delay and energy consumption that limits further downscaling of integrated circuits …

Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …

A major challenge for the continued downscaling of integrated circuits is the resistivity
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …

Increasing resistivity of metal wires with reducing nanoscale dimensions is a major
performance bottleneck of semiconductor computing technologies. We show that metals with …

Epitaxial Ru (0001) layers are sputter deposited onto Al 2 O 3 (0001) substrates and their
resistivity ρ measured both in situ and ex situ as a function of thickness d= 5–80 nm in order …

Phase‐change memory devices have found applications in in‐memory computing where the
physical attributes of these devices are exploited to compute in places without the need to …

Intermetallic compounds have been proposed as potential interconnect materials for
advanced semiconductor devices. This study reports the interdiffusion reliability and …

Mo (001) and Mo (011) layers with thickness d= 4–400 nm are sputter-deposited onto MgO
(001) and α-Al2O3 (11 2¯ 0) substrates and their resistivity is measured in situ and ex situ at …

The resistivity size effect in Ir is quantified with in situ and ex situ transport measurements at
295 and 77 K using epitaxial layers with thickness d= 5–140 nm deposited on MgO (001) …

In an idealized infinite crystal, the material properties are constrained by the symmetries of
the unit cell. The point-group symmetry is broken by the sample shape of any finite crystal …