A comprehensive analysis of strain profile in the heterogeneously coupled Stranski-Krastanov (SK) on Submonolayer (SML) quantum dot heterostructures
In this study, we demonstrate a detailed strain analysis of the heterogeneously coupled
Stranski Krastanov (SK) on Submonolayer (SML) InAs quantum dot heterostructures with …
Stranski Krastanov (SK) on Submonolayer (SML) InAs quantum dot heterostructures with …
Telecommunication wavelength-band single-photon emission from single large InAs quantum dots nucleated on low-density seed quantum dots
ZS Chen, B Ma, XJ Shang, Y He, LC Zhang… - Nanoscale Research …, 2016 - Springer
Single-photon emission in the telecommunication wavelength band is realized with self-
assembled strain-coupled bilayer InAs quantum dots (QDs) embedded in a planar …
assembled strain-coupled bilayer InAs quantum dots (QDs) embedded in a planar …
One order enhancement of detectivity in quaternary capped InAs/GaAs quantum dot infrared photodetectors due to vertical coupling of quantum dot layers
The spectral and electrical properties of vertically coupled quaternary (InAlGaAs) capped
InAs/GaAs quantum dot infrared photodetector with different capping thicknesses are …
InAs/GaAs quantum dot infrared photodetector with different capping thicknesses are …
Ultrafast electronic spectroscopy on the coupling of Stranski-Krastanov and submonolayer quantum dots for potential application in near infrared light harvesting
Heterogeneously coupled self-assembled InAs QDs are always attractive to study their
unique physical properties. Here, we have introduced Stranski-Krastanov (SK) grown …
unique physical properties. Here, we have introduced Stranski-Krastanov (SK) grown …
Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors
The optical, electrical, and spectral properties of a strain coupled InAs quantum dot detector
with a fixed quaternary capping of InAlGaAs and variable GaAs barrier thickness were …
with a fixed quaternary capping of InAlGaAs and variable GaAs barrier thickness were …
Probing indirect exciton complexes in a quantum dot molecule via capacitance-voltage spectroscopy
S Pal, C Junggebauer, SR Valentin, P Eickelmann… - Physical Review B, 2016 - APS
Capacitance-voltage spectroscopy has proved to be a very powerful experimental technique
towards the investigation of carrier-carrier interactions both qualitatively and quantitatively in …
towards the investigation of carrier-carrier interactions both qualitatively and quantitatively in …
Enhancing the performance of heterogeneously coupled InAs Stranski-Krastanov on submonolayer quantum dot heterostructures
A detail investigation on enhancing the performance of heterogeneously coupled Stranski–
Krastanov (SK) on Submonolayer (SML) quantum dot (QD) heterostructure has been done …
Krastanov (SK) on Submonolayer (SML) quantum dot (QD) heterostructure has been done …
Effects of high energy proton implantation on the optical and electrical properties of In (Ga) as/GaAs QD heterostructures with variations in the capping layer
S Upadhyay, A Mandal, H Ghadi, D Pal, A Basu… - Journal of …, 2015 - Elsevier
This study reports enhancements in photoluminescence (PL) efficiency resulting from
implanting InAs/GaAs quantum dots with high energy protons without any post-annealing …
implanting InAs/GaAs quantum dots with high energy protons without any post-annealing …
Tuning the optoeletronic characteristics of strain coupled InAs/GaAs bilayer quantum dot heterostructures through compositional and structural variabilities
Strain coupled quantum dots are the high priority research topic of the present day scientific
community. The ability to enhance the photoluminescence properties is very important for …
community. The ability to enhance the photoluminescence properties is very important for …
Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H−) implantation in quaternary alloy-capped InAs …
A Mandal, H Ghadi, KL Mathur, A Basu… - Materials Research …, 2013 - Elsevier
Here we propose a carrier transport mechanism for low energy H− ions implanted
InAs/GaAs quantum dot infrared photodetectors supportive of the experimental results …
InAs/GaAs quantum dot infrared photodetectors supportive of the experimental results …