GaN nanowires, also called nanocolumns, have emerged over the last decade as promising
nanosized building blocks for a wide variety of optoelectronic devices. In contrast to other III …

A nanolaser is a key component for on-chip optical communications and computing systems.
Here, we report on the low-threshold, continuous-wave operation of a subdiffraction …

Conventional InGaN/GaN light-emitting diodes based on planar quantum well structures do
not allow for efficient long-wavelength operation beyond the blue region due to a strong …

A silicon-based laser, preferably electrically pumped, has long been a scientific and
engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk …

The self-assembled growth of GaN nanorods on Si (111) substrates by plasma-assisted
molecular beam epitaxy under nitrogen-rich conditions is investigated. An amorphous …

Self-assembled GaAs nanowires have been grown on Si by molecular beam epitaxy without
the use of any outside metal catalyst. The growth occurs on Si facets obtained by the …

The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed.
These properties include the absence of residual strain, exclusion of most extended defects …

Realization of smaller and faster coherent light sources is critically important for the
emerging applications in nanophotonics and information technology. Semiconductor lasers …

With increasing interest in GaN based devices, the control and evaluation of doping are
becoming more and more important. We have studied the structural and electrical properties …

We have performed a detailed investigation of the molecular beam epitaxial growth and
characterization of InN nanowires spontaneously formed on Si (111) substrates under …