[HTML][HTML] Impact of vacancies and impurities on ferroelectricity in PVD-and ALD-grown HfO2 films
L Baumgarten, T Szyjka, T Mittmann… - Applied Physics …, 2021 - pubs.aip.org
We investigate the emerging chemical states of TiN/HfO 2/TiN capacitors and focus
especially on the identification of vacancies and impurities in the ferroelectric HfO 2 layers …
especially on the identification of vacancies and impurities in the ferroelectric HfO 2 layers …
Sputtered thin film deposited laser induced graphene based novel micro-supercapacitor device for energy storage application
Pioneering flexible micro-supercapacitors, designed for exceptional energy and power
density, transcend conventional storage limitations. Interdigitated electrodes (IDEs) based …
density, transcend conventional storage limitations. Interdigitated electrodes (IDEs) based …
In-Gap States of HfO2 Nanoislands Driven by Crystal Nucleation: Implications for Resistive Random-Access Memory Devices
N Schmidt, KZ Rushchanskii, U Trstenjak… - ACS Applied Nano …, 2022 - ACS Publications
Envisioned extremely scaled, high-performance memory devices request to conduct the step
from thin semiconductor films to nanoscale structures and the use of promising high-k …
from thin semiconductor films to nanoscale structures and the use of promising high-k …
Fabrication and high photoresponse performance of a La-doped HfO2 thin film-based UV photodiode
JJ Liao, YP Jiang, XG Tang, QX Liu, Z Tang… - Physica B: Condensed …, 2024 - Elsevier
The ability to detect ultraviolet light is crucial for various applications such as energy
harvesting, environmental monitoring, sensing, and ultraviolet astronomy. In this paper, we …
harvesting, environmental monitoring, sensing, and ultraviolet astronomy. In this paper, we …
FIB based fabrication of an operative Pt/HfO2/TiN device for resistive switching inside a transmission electron microscope
Recent advances in microelectromechanical systems (MEMS) based chips for in situ
transmission electron microscopy are opening exciting new avenues in nanoscale research …
transmission electron microscopy are opening exciting new avenues in nanoscale research …
High electrocatalytic response of ultra-refractory ternary alloys of Ta-Hf-C carbide toward hydrogen evolution reaction in acidic media
Transition metal carbide alloys are promising materials to replace platinum as electrodes in
electrocatalysts toward the hydrogen evolution reaction (HER). Although tantalum hafnium …
electrocatalysts toward the hydrogen evolution reaction (HER). Although tantalum hafnium …
Influence of low energy ion irradiation on oxygen deficient hafnium oxide (HfO2) thin films
Abstract Changes in various properties of Hafnium Oxide (HfO2) high k-dielectric thin films,
grown on Silicon (Si) substrate by 500 cycles and 1000 cycles of Atomic Layer Deposition …
grown on Silicon (Si) substrate by 500 cycles and 1000 cycles of Atomic Layer Deposition …
Zirconyl and hafnium hydrogen tellurates as catalysts for esterification
I Tankov, G Rusev, R Yankova, V Georgieva… - Reaction Kinetics …, 2024 - Springer
Catalytic performance of zirconyl hydrogen tellurate (ZrOHTe) and hafnium hydrogen
tellurate (HfHTe) was studied for the first time. A process of butyl acetate synthesis was used …
tellurate (HfHTe) was studied for the first time. A process of butyl acetate synthesis was used …
Low‐temperature synthesis of HfC/HfO2 nanocomposites from a commercial single‐source precursor
SB Mujib, SR Arunachalam… - International Journal of …, 2023 - Wiley Online Library
A liquid‐phase polymer‐to‐ceramic approach is reported for the synthesis of hafnium
carbide (HfC)/hafnium oxide (HfO2) composite particles from a commercial precursor …
carbide (HfC)/hafnium oxide (HfO2) composite particles from a commercial precursor …
Radiation-induced phase separation in nanostructured Hf-In-C ternary thin films under irradiation with 200 keV Ar+ ion beam
J Vacik, A Cannavò, S Bakardjieva… - Radiation Effects and …, 2022 - Taylor & Francis
Thin films consisting of 17 groups of Hf/In/C multilayers cyclically alternating layers of Hf, In
and C each with a thickness of 4–5 nm were synthesized by ion sputtering using a 25 keV …
and C each with a thickness of 4–5 nm were synthesized by ion sputtering using a 25 keV …