The recombination kinetics in the quantum well (QW) active region of ultraviolet light emitting
diodes have been measured in situ during device operation. Non-radiative recombination is …

Numerical model was developed to analyze photovoltaic parameters according to electronic
properties of InGaN/GaN multiple quantum well solar cell (MQWSC) under hydrostatic …

The emerging ultrawide-bandgap AlGaN alloy system holds promise for the development of
advanced materials in the next generation of power semiconductor and UV optoelectronic …

Photoluminescence (PL) spectroscopy of nonpolar m-plane InGaN thin films with indium
composition up to 21% and nearly strain-balanced In 0.09 Ga 0.91 N/Al 0.19 Ga 0.81 N …

Abstract AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior
electrical and material properties that make them ideal for the fabrication of high …

This study presents an experimental investigation of AlGaN/GaN ultraviolet photodetectors
(UV PDs) incorporating square and hexagonal nanohole arrays, aiming to enhance the …

Abstract The III-Nitride alloys (AlGaN and InGaN) photodetectors with Schottky barriers have
been studied, focusing on two structures with active layers: one based on Al 0.25 Ga 0.75 …

This work shows that the complex dynamic-RON characteristics observed for scaled GaN
HEMT devices results from the similar capture/emission activation energies of the defects …

Temperature‐dependent continuous‐excitation and time‐resolved photoluminescence are
studied to probe carrier localization and recombination in nearly strain‐balanced m‐plane …

AlGaN/GaN HEMT structures have gained significant attention in recent years due to their
wide range of applications in power and optoelectronics, including electric vehicles …