In this manuscript, we have investigated the geometrical process variation of a 3-dimensinal
silicon nanotube tunnel field effect transistor (Silicon NT-TFET) using TCAD numerical …

This research is focusing on the geometrical variation effects of carbon nanotube field effect
transistor (CNTFET). The characteristics of the CNTFET are observed based on different …

In this article, we investigated the sensitivity of the junctionless silicon nanotube tunnel field-
effect transistor (JLSiNT-TFET). To accomplish this, we utilized the Sentaurus TCAD …

Silicon nanotube (SiNT) is a new semiconductor nanostructure prepared in recent years,
which has unique optical properties. However, there is still no specific study on the optical …

This paper presents a novel structure of TSV-based silicon nanotube gate-all-around FETs
(both junction-based and junctionless) along with their electrical characteristics using …

This work combines three concepts,(i) reconfigurability,(ii) dual doped source-drain, and (iii)
Ring FET to propose dual doped ring reconfigurable FET (D 2 R 2 FET). The proposed …

The main challenge in MOSFET minituarization is to form an ultra-shallow source/drain (S/D)
junction with high doping concentration gradient, which requires an intricate S/D and …

This paper offers a systematic analysis on the impact of work function (WF) variations on
electrostatic and radio frequency (RF) performances of nchannel junctionless strained …

The main objective of this research is to present the impact of several doping and
geometrical parameters on the performance of the GaN/AlGaN quantum dot-based light …