A self-powered high-performance broadband photodetector was fabricated, based on n-Si
(111)/p-NiO heterojunctions consisting of single-crystal NiO nanosheets, via a facile …

Herein, a newly designed π-conjugated D-π-A type organic material, namely TPA-T-DCV 9,
was synthesized in excellent yield by introducing triphenylamine as electron donor and …

The small silicon chip of Schottky diode (0.8× 0.8× 0.4 mm 3) with planar arrangement of
electrodes (chip PSD) as temperature sensor, which functions under the operating …

In this study the current–voltage and capacitance–voltage characteristics of metal
semiconductor Ni/p-Si (100) based Schottky diode on p-type silicon measured over a wide …

The nanostructure n-ZnO/p-Si heterojunction diode was fabricated by sol–gel method. The
structural and morphological properties of the nanostructure ZnO film have been …

The reverse and forward bias IV characteristics of the Al/p-YMO/p-Si/Al heterojunction were
measured at room temperature (RT) and over temperature range, from 50 to 320 K, and the …

This paper describes a systematic investigation of the phenomenon of white-light-induced
heating in silk fibroin films embedded with gold nanoparticles (Au NPs). The Au NPs …

In this work, we have fabricated an Au/perylene-monoimide (PMI)/p-Si Schottky barrier
diode. We have investigated how electrical and interface characteristics like current–voltage …

Perovskites have attracted great interest because they provide promising improvement for
solar cells. Yet, the perovskites have not been extensively used by the researchers for diode …

A high-performance broadband photodetector based on a Zn-doped NiO/p-Si isotype
heterojunction was successfully fabricated, which consisted of a Zn-doped NiO film on a Si …