Analysis of Novel Core-Shell Junctionless Nanosheet FET for CMOS Applications
VB Sreenivasulu, M Prasad, E Deepthi… - IEEE …, 2024 - ieeexplore.ieee.org
A Rectangular core-shell (RCS) is analyzed on vertically stacked gate oxide junctionless
nanosheet along with doping and gate/dielectric engineering. This paper also proposes an …
nanosheet along with doping and gate/dielectric engineering. This paper also proposes an …
Performance study for vertically quad gate oxide stacked junction-less nano-sheet
M Prasad, UB Mahadevaswamy - IETE Journal of Research, 2023 - Taylor & Francis
With technology scaling and to meet the desired design for low power and high-speed
circuit, innovative design is being studied. The simulation study of vertical Quad gate oxide …
circuit, innovative design is being studied. The simulation study of vertical Quad gate oxide …
Ferroelectric domain modulated AlGaN/GaN field effect transistor
X Tang, X Lu, ZZ Cong, Z Shi, D Wang, J Li… - Applied Physics …, 2022 - pubs.aip.org
A two-dimensional electron gas (2DEG) in (Al, Ga) N/GaN heterojunction (AlGaN/GaN) is a
key factor that affects the performance of GaN-based high electron mobility transistor …
key factor that affects the performance of GaN-based high electron mobility transistor …
Analysis of GAA Junction less NS FET towards Analog and RF Applications at 30 nm Regime
AK Panigrahy, S Hanumanthakari… - IEEE Open Journal …, 2024 - ieeexplore.ieee.org
This research focuses on a quantum model created using an entirely novel nanosheet FET.
The standard model describes the performance of a Gate-all-around (GAA) Junction-less …
The standard model describes the performance of a Gate-all-around (GAA) Junction-less …
Performance Enhancement of Three Fins Vertically Stacked Quad Gate Nanosheet by Employing Rectangular Core–Shell, Doping and Gate-Dielectric Engineering
M Prasad, UB Mahadevaswamy - IETE Journal of Research, 2024 - Taylor & Francis
A Rectangular core–shell (RCS), employed to three fins vertically stacked with gate oxide
stack junctionless nanosheet, along with doping and gate/dielectric engineering, is …
stack junctionless nanosheet, along with doping and gate/dielectric engineering, is …
Performance analysis of stacked Nano sheet at gate length of 10nm at linear and saturation region
In this study, the vertically stacked Nano-sheet at the gate length of 10nm is considered. The
Nano-sheet is vertically stacked and stacked with gate oxide material of SiO2 with HfO2 …
Nano-sheet is vertically stacked and stacked with gate oxide material of SiO2 with HfO2 …
Performance Analysis of Rectangular Core-Shell Double Gate DGJLT
The shrinking of the device parameters' dimensions could be a solution for improving the
performance and high transistor density of traditional MOSFETs. However, the short-channel …
performance and high transistor density of traditional MOSFETs. However, the short-channel …