Mechanism of Threshold Voltage Shift in -GaN Gate AlGaN/GaN Transistors
In this letter, we investigate the threshold voltage (V TH) shift in a p-GaN gate AlGaN/GaN
transistor by designed gate-bias pulse measurements. It was found that the forward gate …
transistor by designed gate-bias pulse measurements. It was found that the forward gate …
Asymmetric Bipolar Injection in a Schottky-Metal/ -GaN/AlGaN/GaN Device Under Forward Bias
In this letter, we investigated the electroluminescence (EL) spectra and photovoltage
spectrum of a Schottky-metal/p-GaN/AlGaN/GaN diode with a semitransparent anode …
spectrum of a Schottky-metal/p-GaN/AlGaN/GaN diode with a semitransparent anode …
Dynamic OFF-State Current (Dynamic ) in -GaN Gate HEMTs With an Ohmic Gate Contact
The OFF-state drain leakage characteristics in 600-V p-GaN HEMTs with an ohmic gate
contact are investigated under dynamic switching conditions instead of commonly used …
contact are investigated under dynamic switching conditions instead of commonly used …
Off-state leakage and current collapse in AlGaN/GaN HEMTs: a virtual gate induced by dislocations
The existence of a correlation between current collapse and off-state reverse-bias leakage
current in heteroepitaxially grown AlGaN/GaN high-electron-mobility transistors is …
current in heteroepitaxially grown AlGaN/GaN high-electron-mobility transistors is …
Analysis of VTH Degradation and Recovery Behaviors of p-GaN Gate HEMTs Under Forward Gate Bias
X Chao, C Tang, J Tan, L Chen, H Zhu… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In this work, detailed degradation and recovery behaviors of p-GaN gate high electron
mobility transistors (HEMTs) are studied under forward gate bias and elevated temperatures …
mobility transistors (HEMTs) are studied under forward gate bias and elevated temperatures …
Investigation of Dynamic Under Switching Operation in Schottky-Type p-GaN Gate HEMTs
In this paper, systematic characterization and the corresponding suppression strategies of
dynamic OFF-state leakage current (I OFF) in Schottky-type p-GaN gate high-electron …
dynamic OFF-state leakage current (I OFF) in Schottky-type p-GaN gate high-electron …
Abnormal temperature and bias dependence of threshold voltage instability in p-GaN/AlGaN/GaN HEMTs
M Chae, HY Cha, H Kim - IEEE Journal of the Electron Devices …, 2024 - ieeexplore.ieee.org
In this work, we investigated the instability of threshold voltage (Vth) in p-GaN/AlGaN/GaN
high electron mobility transistors (HEMTs) under positive gate biases and high …
high electron mobility transistors (HEMTs) under positive gate biases and high …
III-Nitride transistors with photonic-ohmic drain for enhanced dynamic performances
Development of III-nitride high-voltage power devices is still challenged by deep traps that
are inevitable in state-of-the-art AlGaN/GaN-on-Si epitaxial heterostructures. In this work, we …
are inevitable in state-of-the-art AlGaN/GaN-on-Si epitaxial heterostructures. In this work, we …
Demonstration of Electron/Hole Injections in the Gate of -GaN/AlGaN/GaN Power Transistors and Their Effect on Device Dynamic Performance
In this work, we demonstrated the electron/hole injections in the gate of p-GaN/AlGaN/GaN
power transistors at forward gate bias by capturing the electroluminescence (EL) emission …
power transistors at forward gate bias by capturing the electroluminescence (EL) emission …
Investigation of the threshold voltage instability in normally-off p-GaN/AlGaN/GaN HEMTs by optical analysis
A normally-off p-GaN/AlGaN/GaN high-electron-mobility transistor (p-GaN HEMTs) with a
semitransparent gate electrode was investigated. Under forward gate bias …
semitransparent gate electrode was investigated. Under forward gate bias …