Ferromagnetic resonance in Ga1− xMnxAs dilute magnetic semiconductors
X Liu, JK Furdyna - Journal of Physics: Condensed Matter, 2006 - iopscience.iop.org
We review the phenomenon of ferromagnetic resonance (FMR) in ferromagnetic (FM) Ga 1−
x Mn x As semiconductor alloys and their heterostructures in thin film form. We will show that …
x Mn x As semiconductor alloys and their heterostructures in thin film form. We will show that …
Development of new materials for spintronics
J Cibert, JF Bobo, U Lüders - Comptes …, 2005 - comptes-rendus.academie-sciences …
Nous présentons ici une revue de l'état de l'art actuel en matière de recherche fondamentale
sur les matériaux pour la spintronique. L'article est essentiellement dédié aux matériaux …
sur les matériaux pour la spintronique. L'article est essentiellement dédié aux matériaux …
chapter 1 III-V ferromagnetic semiconductors
Publisher Summary Modem information technology utilizes the charge degree of freedom of
electrons in semiconductors to process the information and the spin degree of freedom in …
electrons in semiconductors to process the information and the spin degree of freedom in …
Cubic anisotropy in (Ga, Mn) As layers: Experiment and theory
M Sawicki, O Proselkov, C Sliwa, P Aleshkevych… - Physical Review B, 2018 - APS
Historically, comprehensive studies of dilute ferromagnetic semiconductors, eg, p-type (Cd,
Mn) Te and (Ga, Mn) As, paved the way for a quantitative theoretical description of effects …
Mn) Te and (Ga, Mn) As, paved the way for a quantitative theoretical description of effects …
Structure and magnetism of MnAs nanocrystals embedded in GaAs as a function of post-growth annealing temperature
A Kwiatkowski, D Wasik, M Kamińska… - Journal of applied …, 2007 - pubs.aip.org
Self-organized Ga (Mn) As nanoclusters, embedded in GaAs, were formed during post-
growth thermal annealing of Ga 1− x Mn x As layers. Structural and magnetic properties of …
growth thermal annealing of Ga 1− x Mn x As layers. Structural and magnetic properties of …
Heat-treatment-induced compositional evolution and magnetic state transition in magnetic chalcogenide semiconductor GeFeTe without structural phase change
J Liu, D Shi, C Kan, H Yang - ACS applied materials & interfaces, 2017 - ACS Publications
Control of magnetic properties in diluted magnetic semiconductors (DMSs) using external
stimuli is a prerequisite for many spintronic applications. Fe-doped chalcogenide …
stimuli is a prerequisite for many spintronic applications. Fe-doped chalcogenide …
High-resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides
G Bisognin, D De Salvador, E Napolitani… - Journal of Applied …, 2008 - journals.iucr.org
In this work it is demonstrated how in situ high-resolution X-ray diffraction (HRXRD),
performed during thermal annealing and employing a conventional laboratory source, can …
performed during thermal annealing and employing a conventional laboratory source, can …
Effect of low-temperature annealing on the electronic-and band-structures of (Ga, Mn) As epitaxial layers
O Yastrubchak, T Wosinski, L Gluba… - Journal of Applied …, 2014 - pubs.aip.org
The effect of outdiffusion of Mn interstitials from (Ga, Mn) As epitaxial layers, caused by post-
growth low-temperature annealing, on their electronic-and band-structure properties has …
growth low-temperature annealing, on their electronic-and band-structure properties has …
Ferromagnetic GaMnAs grown on (110) faced GaAs
U Wurstbauer, M Sperl, M Soda, D Neumaier… - Applied Physics …, 2008 - pubs.aip.org
Thin Ga 0.94 Mn 0.06 As layers have been grown by low temperature molecular beam
epitaxy on (110) GaAs substrates and on [110] and [− 110] oriented GaAs cleaved edges …
epitaxy on (110) GaAs substrates and on [110] and [− 110] oriented GaAs cleaved edges …