Deep neural network-based reduced-order modeling of ion–surface interactions combined with molecular dynamics simulation
With the advent of complex and sophisticated architectures in semiconductor device
manufacturing, atomic-resolution accuracy and precision are commonly required for …
manufacturing, atomic-resolution accuracy and precision are commonly required for …
Defect-Mediated Atomic Layer Etching Processes on Cl–Si (100): An Atomistic Insight
P Wang, F Fang - The Journal of Physical Chemistry C, 2023 - ACS Publications
Defects play a significant role in atomic layer etching (ALE) processes; however, a
fundamental understanding at the atomic level is still lacking. To bridge this knowledge gap …
fundamental understanding at the atomic level is still lacking. To bridge this knowledge gap …
[HTML][HTML] Atomistic insights on hydrogen plasma treatment for stabilizing High-k/Si interface
Hydrogen plasma treatment (HPT) is commonly employed to enhance the interface quality of
high-k metal-oxide gate stacks in semiconductor, but the plasma process is highly sensitive …
high-k metal-oxide gate stacks in semiconductor, but the plasma process is highly sensitive …
Mechanism Investigation of Temperature Dependent Growth and Etching Process of GeCl4 on SiGe Surface: ab-initio Study
JY Park, G Kim, JB Kim, SM Lee, S Kim… - … on Simulation of …, 2021 - ieeexplore.ieee.org
Herein, we unveil the deposition and etch mechanism of GeCl 4 on the SiGe surface. At the
high temperature, GeCl 4 is dissociated to GeCl 2 and then worked as a deposition source …
high temperature, GeCl 4 is dissociated to GeCl 2 and then worked as a deposition source …