This study is focusing on dark current and 1/f noise characteristics of In 0.74 Ga 0.26 As
photodiode passivated with different passivation films. With regard to mesa-type wavelength …

Human mesenchymal stem cells (hMSCs) offer a patient-derived cell source for conducting
mechanistic studies of diseases or for several therapeutic applications. Understanding …

Silicon nitride films (SiN x) deposited by ICPCVD (inductively coupled plasma chemical
vapor deposition) at lower temperature (75° C) are investigated on extended wavelength In …

Abstract Au/silicon nitride/In 0.82 Al 0.18 As metal insulating semiconductor (MIS) capacitors
were fabricated and then investigated by capacitance voltage (C–V) test at variable …

A device fabrication and measurement method utilizing a SiO 2–SiO 2 covalent bonding
technique is presented for high-temperature thermoelectric characterization of thin-film III–V …

For the purposes of improving the performance of the SWIR detector, two types of annealing
treatment for extended wavelength In 0.83 Ga 0.17 As photodiodes with PIN structure are …

The surface and optical properties of silicon nitride samples with different compositions were
investigated. The samples were deposited on InP by inductively coupled plasma chemical …

Silicon nitride films were deposited with mixed gasses of SiH 4-NH 3-N 2 using a pulsed,
plasma-enhanced chemical vapor deposition system at room temperature. The surface …

The influence of silicon nitride passivation on electron mobility of InGaAs/InP composite
channel high electron mobility transistor structure has been studied. Different from the …

Using a pulsed-plasma enhanced chemical vapor deposition system, silicon nitride films
were deposited at room temperature. A refractive index was examined in the range of bias …