Growth, transfer printing and colour conversion techniques towards full-colour micro-LED display

X Zhou, P Tian, CW Sher, J Wu, H Liu, R Liu… - Progress in Quantum …, 2020 - Elsevier
Micro light-emitting diode (micro-LED) display, mainly based on inorganic GaN-based LED,
is an emerging technique with high contrast, low power consumption, long lifetime and fast …

[HTML][HTML] Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano-and micro-LEDs

HS Wasisto, JD Prades, J Gülink, A Waag - Applied Physics Reviews, 2019 - pubs.aip.org
Gallium nitride (GaN) light-emitting-diode (LED) technology has been the revolution in
modern lighting. In the last decade, a huge global market of efficient, long-lasting, and …

[图书][B] Optical wireless communications: system and channel modelling with Matlab®

Z Ghassemlooy, W Popoola, S Rajbhandari - 2019 - taylorfrancis.com
The 2nd Edition of Optical Wireless Communications: System and Channel Modelling with
MATLAB® with additional new materials, is a self-contained volume that provides a concise …

A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications

S Rajbhandari, JJD McKendry… - Semiconductor …, 2017 - iopscience.iop.org
The field of visible light communications (VLC) has gained significant interest over the last
decade, in both fibre and free-space embodiments. In fibre systems, the availability of low …

Mass transfer techniques for large-scale and high-density microLED arrays

F Chen, J Bian, J Hu, N Sun, B Yang… - … Journal of Extreme …, 2022 - iopscience.iop.org
Inorganic-based micro light-emitting diodes (microLEDs) offer more fascinating properties
and unique demands in next-generation displays. However, the small size of the microLED …

[HTML][HTML] III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications

C Zhao, N Alfaraj, RC Subedi, JW Liang… - Progress in Quantum …, 2018 - Elsevier
Group-III nitrides and their alloys feature direct bandgaps covering a broad range of the
electromagnetic spectrum, making them a promising material system for various …

A Decade of Nonpolar and Semipolar III‐Nitrides: A Review of Successes and Challenges

M Monavarian, A Rashidi, D Feezell - physica status solidi (a), 2019 - Wiley Online Library
The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …

A review on the low external quantum efficiency and the remedies for GaN-based micro-LEDs

S Hang, CM Chuang, Y Zhang, C Chu… - Journal of Physics D …, 2021 - iopscience.iop.org
GaN-based micro-size light-emitting diode (μLED) have emerged as a promising light
sources for a wide range of applications in displays, visible light communication etc. In …

Nonpolar InGaN/GaN core–shell single nanowire lasers

C Li, JB Wright, S Liu, P Lu, JJ Figiel, B Leung… - Nano …, 2017 - ACS Publications
We report lasing from nonpolar pin InGaN/GaN multi-quantum well core–shell single-
nanowire lasers by optical pumping at room temperature. The nanowire lasers were …

Carrier dynamics and electro-optical characterization of high-performance GaN/InGaN core-shell nanowire light-emitting diodes

M Nami, IE Stricklin, KM DaVico… - Scientific reports, 2018 - nature.com
In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell
nanowire-based LEDs grown using selective-area epitaxy and characterize their electro …