Silicon carbide (SiC) is a typical wide band-gap semiconductor material that exhibits
excellent physical properties such as high electron saturated drift velocity, high breakdown …

Atomic force microscopy (AFM) was combined with scanning electron microscopy (SEM) to
investigate electronic devices. In general, under observation using an optical microscope, it …

We have developed a scanning probe microscope to evaluate the device with high spatial
resolution in a power semiconductor device with a voltage applied. Specifically, we …

An evaluation method based on multifunctional scanning probe microscopy enables the
nanoscale observation of power semiconductor devices. Herein, we report the results of the …

We have observed in the nanoscale of the power semiconductor device under the bias
voltage applied using by the scanning probe microscope based on combined with …

Power semiconductor devices are progressing towards high-withstand voltage using wide
bandgap semiconductor materials as well as having the ability to flow a significant amount of …

抄録 We have developed a multi-function scanning probe microscopy (Multi-SPM) system
that integrates FM-AFM/KFM/A-MFM techniques for comprehensive imaging of current path …

抄録 Improving the performance of power devices is necessary to perform highly efficient
power conversion. Therefore, better power devices made of wide bandgap semiconductors …

抄録 We have developed a scanning probe microscope to evaluate the device with high
spatial resolution in a power semiconductor device with a voltage applied. Specifically, we …