Recent progress in red light-emitting diodes by III-nitride materials
GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …
same material system. These emitters are expected to be next-generation red, green, and …
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Record-low thermal boundary resistance between diamond and GaN-on-SiC for enabling radiofrequency device cooling
M Malakoutian, DE Field, NJ Hines… - … Applied Materials & …, 2021 - ACS Publications
The implementation of 5G-and-beyond networks requires faster, high-performance, and
power-efficient semiconductor devices, which are only possible with materials that can …
power-efficient semiconductor devices, which are only possible with materials that can …
Demonstration of constant 8 W/mm power density at 10, 30, and 94 GHz in state-of-the-art millimeter-wave N-polar GaN MISHEMTs
This paper reports on state-of-the-art millimeter-wave power performance of N-polar GaN-
based metal–insulator–semiconductor high-electron-mobility transistors at 30 and 94 GHz …
based metal–insulator–semiconductor high-electron-mobility transistors at 30 and 94 GHz …
W-band power performance of SiN-passivated N-polar GaN deep recess HEMTs
This letter reports on the improvement of the large-signal W-band power performance of
nitrogen-polar gallium nitride deep recess high electron mobility transistors with the addition …
nitrogen-polar gallium nitride deep recess high electron mobility transistors with the addition …
High linearity and high gain performance of N-polar GaN MIS-HEMT at 30 GHz
P Shrestha, M Guidry, B Romanczyk… - IEEE Electron …, 2020 - ieeexplore.ieee.org
Though GaN HEMTs have primarily been used for power amplification, they are also well
suited for receiver applications. In the front-end of receivers, non-linearities, in particular …
suited for receiver applications. In the front-end of receivers, non-linearities, in particular …
6.2 W/Mm and record 33.8% PAE at 94 GHz from N-polar GaN deep recess MIS-HEMTs with ALD Ru gates
This letter reports on the W-band power performance of N-polar GaN deep recess MIS-high
electron mobility transistors (HEMTs) using a new atomic layer deposition (ALD) ruthenium …
electron mobility transistors (HEMTs) using a new atomic layer deposition (ALD) ruthenium …
N-polar GaN: Epitaxy, properties, and device applications
Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …
for high power switching, high power RF and lighting applications. In c-direction, depending …
N-polar GaN HEMTs exhibiting record breakdown voltage over 2000 V and low dynamic on-resistance
OS Koksaldi, J Haller, H Li… - IEEE Electron …, 2018 - ieeexplore.ieee.org
Nitrogen polar (N-Polar) GaN high-electron-mobility transistors (HEMT) targeting high-
voltage switching applications were fabricated on epi-layers grown by metal-organic …
voltage switching applications were fabricated on epi-layers grown by metal-organic …