Thin insulating layers are used to modulate a depletion region at the source of a thin‐film
transistor. Bottom contact, staggered‐electrode indium gallium zinc oxide transistors with a 3 …

Abstract Zinc-Tin-Oxide (ZTO) thin films were fabricated using a simple and eco-friendly sol-
gel method and their application in thin film transistors (TFTs) was investigated. Annealing …

The effects of various oxygen flows on indium gallium zinc oxide (IGZO) based thin-film
transistors (TFTs) with different channel width sizes have been investigated. The IGZO nano …

Wide band gap oxide materials with additional infrared (IR) photosensing have rarely been
reported because of the lack of the IR-associated sub band gap absorption. In this work, we …

Amorphous indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) have shown
significant potential for applicationin transparent and flexible electronicdevices. However …

In this study, we examined the effects of the annealing atmosphere on the electrical
performance and stability of high-mobility indium-gallium-tin oxide (IGTO) thin-film …

Amorphous oxide-based thin-film transistors (TFTs) have been applied to display and
various next-generation applications. The amorphous oxide thin film has exhibited a higher …

We report a comprehensive study on the impact of source-to-gate (LS) and drain-to-gate
(LD) overlap lengths on the performance of amorphous indium-gallium-zinc-oxide (a-IGZO) …

Metal-oxide thin-film transistors (TFTs) have been developed as promising candidates for
use in various electronic and optoelectronic applications. In this study, we fabricated bilayer …

Controlling the contact properties of a copper (Cu) electrode is an important process for
improving the performance of an amorphous indium–gallium–zinc oxide (a-IGZO) thin-film …