With the concept of groove gate and implementing the idea of silicon on insulator (SOI), a new analytical model is developed for the rectangular recessed channel silicon on insulator …
S Bhol, S Mishra, SS Mohanty… - 2019 Devices for …, 2019 - ieeexplore.ieee.org
This work reports a new grooved gate silicon-on-insulator (GG-SOI) MOSFET with multi- layered (SiO 2/Si 3 N 4/SiO 2) buried insulator structure to reduce self-heating effect (SHE) …
S Mishra, SS Mohanty, S Bhol… - Nanomaterials and …, 2019 - icevirtuallibrary.com
This paper presents a simulation-based systematic characterization of a dual-metal-stack grooved-step-gate (DMS-GSG) silicon-on-nothing (SON) metal–oxide–semiconductor field …
SS Mohanty, S Mishra, D Sathpathy… - ICICCT 2019–System …, 2020 - Springer
Abstract Double Gate Metal Oxide Semiconductor Field Effect Transistors (DGMOSFET) have one of the emerged potential contenders in CMOS VLSI technology due to the fast …
A hot-carrier-reliability assessment of Silicon on Insulator (SOI) based multi-layer rectangular groove gate silicon on insulator (MLRGG-SOI) MOSFET has been done using …