TCAD device modelling and simulation of wide bandgap power semiconductors
Technology computer-aided Design (TCAD) is essential for devices technology
development, including wide bandgap power semiconductors. However, most TCAD tools …
development, including wide bandgap power semiconductors. However, most TCAD tools …
On the suitability of 3C-Silicon Carbide as an alternative to 4H-Silicon Carbide for power diodes
AE Arvanitopoulos, M Antoniou… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
Major recent developments in growth expertise related to the cubic polytype of Silicon
Carbide, the 3C-SiC, coupled with its remarkable physical properties and the low fabrication …
Carbide, the 3C-SiC, coupled with its remarkable physical properties and the low fabrication …
Enhancing -GaO Schottky Barrier Diodes' Performance Through Low-Temperature Post-Annealing: Achieving Optimal Forward Current–Voltage Characteristics
C Yu, H Hu, Y Wang, X Jia, S Huang… - … on Electron Devices, 2024 - ieeexplore.ieee.org
In this article, we present a low-temperature post-annealing (LTPA) technique to achieve
ideal forward current–voltage (IV) characteristics for-gallium oxide (-Ga O) Schottky barrier …
ideal forward current–voltage (IV) characteristics for-gallium oxide (-Ga O) Schottky barrier …
On the 3C-SiC/SiO2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating …
N Lophitis, A Arvanitopoulos… - … IEEE Workshop on …, 2022 - ieeexplore.ieee.org
Cubic (3C-) silicon carbide (SiC) metal oxide semiconductor (MOS) devices have the
potential to achieve superior performance and reliability. The effective channel mobility can …
potential to achieve superior performance and reliability. The effective channel mobility can …