Surface engineering of metals: techniques, characterizations and applications

M Ramezani, Z Mohd Ripin, T Pasang, CP Jiang - Metals, 2023 - mdpi.com
This paper presents a comprehensive review of recent advancements in surface
engineering of metals, encompassing techniques, characterization methods and …

Metal-assisted chemical etching beyond Si: applications to III–V compounds and wide-bandgap semiconductors

S Znati, J Wharwood, KG Tezanos, X Li, PK Mohseni - Nanoscale, 2024 - pubs.rsc.org
Metal-assisted chemical etching (MacEtch) has emerged as a versatile technique for
fabricating a variety of semiconductor nanostructures. Since early investigations in 2000 …

Electrochemically deposited germanium nanowires: Structure and resistivity against high-temperature oxidation

DL Goroshko, IM Gavrilin, SV Chusovitina… - Applied Surface …, 2024 - Elsevier
Using photoluminescence and Raman spectroscopy, as well as high-resolution
transmission microscopy and X-ray diffraction, germanium nanowires obtained by cathodic …

Constructing the electron donor-acceptor unit in keto-type structure COFs for enhanced photocatalytic H2O2 production

J Jiang, C Li, S Zhou, H Xie, Z Wei, Y Chen… - Colloids and Surfaces A …, 2025 - Elsevier
Engineering of functional groups is a promising way to optimize the structure and facilitate
photocatalytic H 2 O 2 production of covalent organic frameworks (COFs), and hydrophilic …

A review of the mechanism and optimization of metal-assisted chemical etching and applications in semiconductors

K Jung, J Lee - Micro and Nano Systems Letters, 2024 - Springer
Metal-Assisted Chemical Etching (MACE) is a technique for precisely forming
nanostructures on semiconductor substrates, and it is actively researched in various fields …

[HTML][HTML] Nanocarbon-assisted chemical etching of Ge (100) in H2O2

J Li, S Yamamoto, K Inagaki, K Arima - Electrochemistry Communications, 2024 - Elsevier
We utilized graphene oxide (GO) flakes as a starting material to conduct nanocarbon (NC)-
assisted chemical etching of Ge (1 0 0) surfaces in H 2 O 2 solutions. Upon initial etching in …

Fs-laser significantly enhances both above-and below-bandgap absorption in germanium

X Liu, DV Gnatyuk, J Halmela, V Vähänissi… - Optical Materials …, 2025 - opg.optica.org
Fs-laser irradiation is a promising fabrication method for future broadband optoelectronic
applications as it creates antireflective micro-and nanoscale structures on semiconductor …

Communication—Controlling Etching of Germanium through Surface Charge Manipulation

JG Wood, S Mitsyuk, C Brayfield… - Journal of The …, 2024 - iopscience.iop.org
Potassium hydroxide (KOH) aqueous solutions can effectively etch germanium. Etch rates
were determined in an electrolytic etch cell. Electrically isolated Ge wafers were subject to …