Theoretical models of Schottky-barrier height formation are reviewed. A particular emphasis
is placed on the examination of how these models agree with general physical principles …

Formation of ohmic contacts onto GaAs epitaxial layers was reviewed. Because the Fermi
energy of GaAs is pinned at the surface near the middle of the bandgap, it is impossible to …

Non-alloyed ohmic contacts to n-GaAs using compositionally graded In x Ga 1-x As layers
grown by molecular beam epitaxy are studied. The carrier concentration reduction in the …

Ohmic contacts to n‐GaAs formed by the heat treatment of In films have been investigated.
The widely‐accepted model for ohmic contact formation, involving the establishment of a …

The thermally stable Pd/Ge ohmic contacts to n‐type GaAs are obtained by a rapid thermal
annealing method. Compared to the conventional AuGe based ohmic metals, the surface …

Auger depth profiling and contact resistance measurements have been used to study
sintered Ni/Au/Au Ge and Ni/Au Ge contacts to GaAs. The results indicate that Ge …

We have studied the metallurgy of the contacts Au Ge/n-GaAs (12 wt.% Ge), Au Ge/n-InP,
Au Zn/p-InP (12 wt.% Zn) and Au Be/p-InP (0.9 wt.% Be) between 320 and 450° C by …

The control of the electrical and the structural properties of ohmic contacts to GaAs is
extremely important in the fabrication of GaAs devices. The annealing process parameters …

The electrical and chemical properties of Pd ohmic contacts to p-type 4H-SiC, together with
their thermal stability, have been studied in the annealing temperature range 600–700° C …

Alloyed ohmic contacts based on AuGeNiAg metallization with transfer resistance from
ohmic metal to the 2DEG channel of less than 0.1 Ω mm have been fabricated on …