Abstract The performance of InAs/GaAs quantum dot solar cells was investigated up to an
optical concentration of 500-suns. A high temperature spacer layer between successive …

In this study, we provide fundamental understanding on defect properties of the Sb 2 (S, Se)
3 absorber film and the impact on transmission of photo-excited carriers in N–i–P …

Reducing the form factor while retaining the radiation hardness and performance matrix is
the goal of avionics. While a compromise between a transistor's size and its radiation …

Self-assembled In 0.5 Ga 0.5 As/GaAs quantum dot solar cell (QDSC) was grown by metal
organic chemical vapor deposition. Systematic measurements of dark current versus voltage …

We report on the fabrication of GaAs based p–i–n solar cells containing 5 and 10 layers of
type II GaSb quantum rings grown by molecular beam epitaxy. Solar cells containing …

We report on an experimental study of the intersubband optical response of an In0. 5Ga0.
5As/GaAs quantum dot solar cell (QDSC). By calculating the quantum dot absorption cross …

GaSb/InGaAs quantum dot–well (QDW) hybrid active regions with type-II band alignment are
explored for increasing the infrared absorption in GaAs solar cells. Analyzed GaAs p–i–n …

This paper presents a theoretical study of the effect of the nature of the carrier escape from
quantum dots (QDs) on the performance of InAs/GaAs QD solar cells (QDSCs), based on …

This study investigates the impact of gamma radiation on the electrical properties of
InAs/InGaAs quantum dot-based laser structures grown on both GaAs (Sample A) and Si …

We have studied the ensemble photoluminescence (PL) of 11 GaSb/GaAs quantum dot/ring
(QD/QR) samples over≥ 5 orders of magnitude of laser power. All samples exhibit a …