AlGaN/GaN diaphragm-based pressure sensor with direct high performance piezoelectric transduction mechanism
J Dzuba, G Vanko, M Držík, I Rýger, V Kutiš… - Applied Physics …, 2015 - pubs.aip.org
The piezoelectric response of AlGaN/GaN circular HEMT pressure sensing device
integrated on AlGaN/GaN diaphragm was experimentally investigated and supported by the …
integrated on AlGaN/GaN diaphragm was experimentally investigated and supported by the …
Micromachined membrane structures for pressure sensors based on AlGaN/GaN circular HEMT sensing device
T Lalinský, P Hudek, G Vanko, J Dzuba, V Kutiš… - Microelectronic …, 2012 - Elsevier
A new design concept of pressure sensors based on circular high electron mobility transistor
(C-HEMT) sensing devices integrated on circular, ring and/or sequential ring AlGaN/GaN …
(C-HEMT) sensing devices integrated on circular, ring and/or sequential ring AlGaN/GaN …
Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation
T Lalinský, M Vallo, G Vanko, E Dobročka… - Applied surface …, 2013 - Elsevier
We report on a high temperature forming of iridium oxides (IrO 2) gates of circular
AlGaN/GaN high electron mobility transistors (C-HEMTs) to be predetermined for high …
AlGaN/GaN high electron mobility transistors (C-HEMTs) to be predetermined for high …
Piezoelectric thin film pressure sensor made by atomic layer deposition of 002-oriented ZnO on Si3N4 membrane
In this work, we present a pressure sensor based on piezoelectric response of a thin 100 nm
ZnO 002-oriented film grown using atomic layer deposition (ALD) technique on a …
ZnO 002-oriented film grown using atomic layer deposition (ALD) technique on a …
Effects of annealing on schottky characteristics in algan/gan hemt with transparent gate electrode
C Wang, K Zhang, YL He, XF Zheng, XH Ma… - Chinese Physics …, 2014 - iopscience.iop.org
AlGaN/GaN high-electron-mobility transistors (HEMTs) with AZO and Ni/AZO transparent
gate electrodes are fabricated, respectively. In addition, the Ni/Au-gated HEMTs are also …
gate electrodes are fabricated, respectively. In addition, the Ni/Au-gated HEMTs are also …
MEMS pressure sensor fabricated by advanced bulk micromachining techniques
G Vanko, P Hudek, J Zehetner, J Dzuba… - … , and MEMS VI, 2013 - spiedigitallibrary.org
We present the design and implementation of a MEMS pressure sensor with an operation
potential under harsh conditions at high temperatures (T= 300–800° C). The sensor consists …
potential under harsh conditions at high temperatures (T= 300–800° C). The sensor consists …
[PDF][PDF] اثر شکل نانو ذره بر رفتار حسگر نانوکامپوزیتی PVDF/BaTiO3
گودرزی وهاب الدین, کوکبی مهرداد, رزاقی کاشانی مهدی… - 2014 - sid.ir
تردق زا رمیلپ نیا. تسا هتفای یدایز دربراک اه رگسح تخاس رد) PVDF (دی ارولف نلی دی نی و یلپ
رمیلپ صاوخ شیازفا فده اب. تسا رادروخرب اهدربراک لی بق نی ا رد اه کیماسر هب تبسن یی لااب …
رمیلپ صاوخ شیازفا فده اب. تسا رادروخرب اهدربراک لی بق نی ا رد اه کیماسر هب تبسن یی لااب …
[PDF][PDF] Thermo-Mechanical Design of Electronic Systems
J Jakovenko - 2012 - dspace.cvut.cz
My very special thanks go to the Prof. Miroslav Husák the head of department who trusted
upon my efforts and encouraged me in taking specific research paths, who managed to …
upon my efforts and encouraged me in taking specific research paths, who managed to …
[引用][C] Effects of Annealing on Schottky Characteristics in A1GaN/GaN HEMT with Transparent Gate Electrode
王冲， 张坤， 何云龙， 郑雪峰， 马晓华， 张进成， 郝跃 - Chinese Physics Letters, 2014