Resistance random-access memory (RRAM) is a promising candidate for both the next-
generation non-volatile memory and the key element of neural networks. In this article …

Oxides that exhibit an insulator–metal transition can be used to fabricate energy‐efficient
relaxation oscillators for use in hardware‐based neural networks but there are very few …

The application of hardware‐based neural networks can be enhanced by integrating
sensory neurons and synapses that enable direct input from external stimuli. This work …

The miniaturization, high performance, energy efficiency, and new added functionalities are
the essential drivers of modern information data storage and processing technologies …

In a digital-analog mixed neuromorphic system, various complex peripheral circuits may
offset the integration and energy efficiency advantages of the dense crossbar. To simplify the …

In this paper, undoped and Cr-doped VO 2 thin films were fabricated and deposited onto Al
2 O 3 substrates using a sol-gel method. Then, the effects of Cr-doping on the …

Amorphous vanadium oxide films were produced using a cathodic arc deposition technique.
Varying oxygen pressure in a chamber during the film growth, we obtained the samples with …

The I–V switching curves of bipolar switching non-volatile ReRAM devices show peculiar
characteristics, such as an abrupt ON switching and the existence of a universal switching …

Vanadium dioxide (VO2) is a versatile phase change material that undergoes insulator‐to‐
metal transition (IMT) triggered by multiple stimuli such as temperature, light, and electricity …

Physically transient resistive switching memory has attracted much attention in recent years
for potential applications in security information storage and environmental protection …