Memristors with excellent scalability have the potential to revolutionize not only the field of
information storage but also neuromorphic computing. Conventional metal oxides are widely …

Capacitors with high electrostatic energy density, long-term stability, and environmental
friendliness are strongly demanded in modern electrical and electronic systems. Here, we …

To study the effects of La and Ti cosubstitutions on ferroelectric and impedance behavior of
BiFeO3,(Bi0. 90La0. 10) FeO3, Bi (Fe0. 95Ti0. 05) O3, and (Bi0. 90La0. 10)(Fe0. 95Ti0. 05) …

A recent hot-spot topic for flexible and wearable devices involves high-performance
nonvolatile ferroelectric memories operating under compressive or tensile mechanical …

BiFeO 3 multiferroic ceramics were modified by introducing CaTiO 3. The stability of
perovskite BiFeO 3 was increased by the present modification, and the single‐phase (Bi 1 …

Abstract The 0.55 Na 0.5 Bi 0.5 TiO 3-0.45 Sr 0.7 Bi 0.2 TiO 3 (0.55 NBT-0.45 SBT) thin films
with Mn doping were fabricated on the platinum-buffered Si substrates using the sol–gel …

As potential photovoltaic materials, transition‐metal oxides such as BiFeO3 (BFO) are
capable of absorbing a substantial portion of solar light and incorporating ferroic orders into …

Dielectric thin film capacitors have attracted immense attention in modern pulsed power
electronic systems as essential energy-storage components. Nevertheless, there are still a …

Bi 1− x La x Fe 1− y Co y O 3 (⁠ x= 0⁠, 0.1; y= 0⁠, 0.05, 0.1) polycrystalline thin films were
fabricated on Pt/Ti/SiO 2/Si (111) substrates via chemical solution deposition method. X-ray …

Multiferroic BiFe1− xMnxO3 (x= 0, 0.04, 0.08, 0.12) films have been prepared on
Pt/Ti/SiO2/Si and ITO/glass substrates via the solution-gelation technique. The impacts of Mn …