Spin dynamics in semiconductors

MW Wu, JH Jiang, MQ Weng - Physics Reports, 2010 - Elsevier
This article reviews the current status of spin dynamics in semiconductors which has
achieved much progress in the recent years due to the fast growing field of semiconductor …

Silicon spintronics: Progress and challenges

V Sverdlov, S Selberherr - Physics Reports, 2015 - Elsevier
Electron spin attracts much attention as an alternative to the electron charge degree of
freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon …

Electrical creation of spin polarization in silicon at room temperature

SP Dash, S Sharma, RS Patel, MP de Jong, R Jansen - Nature, 2009 - nature.com
The control and manipulation of the electron spin in semiconductors is central to spintronics,,
which aims to represent digital information using spin orientation rather than electron …

[HTML][HTML] Observation of the inverse spin Hall effect in silicon

K Ando, E Saitoh - Nature communications, 2012 - nature.com
The spin–orbit interaction in a solid couples the spin of an electron to its momentum. This
coupling gives rise to mutual conversion between spin and charge currents: the direct and …

Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

SP Dash, S Sharma, JC Le Breton, J Peiro… - Physical Review B …, 2011 - APS
Although the creation of spin polarization in various nonmagnetic media via electrical spin
injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic …

Spin injection from Heusler alloys into semiconductors: A materials perspective

R Farshchi, M Ramsteiner - Journal of Applied Physics, 2013 - pubs.aip.org
The notion of using electron spins as bits for highly efficient computation coupled with non-
volatile data storage has driven an intense international research effort over the past …

Analysis of phonon-induced spin relaxation processes in silicon

Y Song, H Dery - Physical Review B—Condensed Matter and Materials …, 2012 - APS
We study all of the leading-order contributions to spin relaxation of conduction electrons in
silicon due to the electron-phonon interaction. Using group theory, the k· p perturbation …

Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession

T Sasaki, T Oikawa, T Suzuki, M Shiraishi… - Applied Physics …, 2010 - pubs.aip.org
The Hanle-type spin precession method was carried out in association with nonlocal (NL)
magnetoresistance measurement using a highly doped (5× 10 19 cm− 3) silicon (Si) …

Giant Spin‐Valve Effect in Planar Spin Devices Using an Artificially Implemented Nanolength Mott‐Insulator Region

T Endo, S Tsuruoka, Y Tadano… - Advanced …, 2023 - Wiley Online Library
Developing technology to realize oxide‐based nanoscale planar integrated circuits is in
high demand for next‐generation multifunctional electronics. Oxide circuits can have a …

Silicon spin communication

H Dery, Y Song, P Li, I Zˇutić - Applied Physics Letters, 2011 - pubs.aip.org
Recent experimental breakthroughs have demonstrated that the electron spin in silicon can
be reliably injected and detected as well as transferred over distances exceeding 1 mm. We …