[HTML][HTML] Experimental electronic stopping cross-section of tungsten bulk and sputter-deposited thin films for slow protons, deuterons and helium ions

J Shams-Latifi, E Pitthan, PM Wolf… - Nuclear Materials and …, 2023 - Elsevier
The experimental electronic stopping cross-section of tungsten for low-energy protons,
deuterons, and helium ions is deduced from backscattering experiments from thin films and …

[HTML][HTML] Energy deposition by H and He ions at keV energies in self-supporting, single crystalline SiC foils

E Ntemou, R Holeňák, D Primetzhofer - Radiation Physics and Chemistry, 2022 - Elsevier
The specific energy deposition of H and He ions in SiC has been studied for both random
and channeling orientations. The experiments were carried out in transmission geometry …

Electronic interaction of slow hydrogen, helium, nitrogen, and neon ions with silicon

E Ntemou, S Lohmann, R Holeňák, D Primetzhofer - Physical Review B, 2023 - APS
We investigate the electronic excitation of silicon by hydrogen, helium, nitrogen, and neon
ions for ion energies ranging from several tens to a few hundred kiloelectronvolts …

Ab initio electronic stopping power and threshold effect of channeled slow light ions in

CK Li, F Wang, B Liao, XP OuYang, FS Zhang - Physical Review B, 2017 - APS
We present an ab initio study of the electronic stopping power of protons and helium ions in
an insulating material, HfO 2. The calculations are carried out in channeling conditions with …

Electronic interaction of slow hydrogen and helium ions with nickel-silicon systems

TT Tran, L Jablonka, B Bruckner, S Rund, D Roth… - Physical Review A, 2019 - APS
Electronic stopping cross sections (SCSs) of nickel, silicon, and nickel-silicon alloys for
protons and helium (He) ions are studied in the regime of medium-and low-energy ion …

Sputter-deposition of ultra-thin film stacks from EUROFER97 and tungsten: characterisation and interaction with low-energy D and He ions

J Shams-Latifi, E Pitthan, TT Tran, R Kaur… - Materials Research …, 2024 - iopscience.iop.org
We have sputter-deposited stacks of ultrathin layers from EUROFER97 and tungsten on
silicon substrates. Ion beam analysis techniques are used for composition characterisation …

Influence of the excitation threshold of electrons on electronic stopping of slow light ions

D Goebl, W Roessler, D Roth, P Bauer - Physical Review A, 2014 - APS
We present electronic stopping power data for H and He ions in Zn and In obtained from
backscattering experiments in the range of low velocities; for In data are obtained up to the …

Neutralization of slow helium ions scattered from single crystalline aluminum and tantalum surfaces and their oxides

B Bruckner, P Bauer, D Primetzhofer - Surface Science, 2020 - Elsevier
We investigated the impact of surface oxygen on the ion yield for He+ ions scattered from
different single crystalline surfaces in low-energy ion scattering. Initially clean Al (111) and …

[HTML][HTML] Experimental electronic stopping cross section of titanium for slow hydrogen, deuterium, and helium ions

PM Wolf, E Pitthan, D Primetzhofer - … in Physics Research Section B: Beam …, 2024 - Elsevier
The electronic stopping cross section of Ti for light ions is measured in an energy range of
1.3–5.0 keV for H+, and 1.5–10.0 keV for He+. All measurements were performed using in …

Energy loss of slow Ne ions in Pt and Ag from TOF-MEIS and Monte-Carlo simulations

SR Naqvi, G Possnert, D Primetzhofer - Nuclear Instruments and Methods …, 2016 - Elsevier
Abstract Time-Of-Flight Medium Energy Ion Scattering (TOF-MEIS) experiments were
performed to investigate the different energy loss mechanisms for slow Ne ions (a few …