Investigation of N2 plasma GaAs surface passivation efficiency against air exposure: Towards an enhanced diode
H Mehdi, F Réveret, C Robert-Goumet, L Bideux… - Applied Surface …, 2022 - Elsevier
Abstract GaAs (0 0 1) substrates nitrided with N 2 plasma at various temperatures were
investigated after being exposed to air for 40 days. They were studied by means of parallel …
investigated after being exposed to air for 40 days. They were studied by means of parallel …
Fabrication and characteristics of a GaInP/GaAs heterojunction bipolar transistor using a selective buried sub-collector
YF Yang, CC Hsu, HJ Ou, TC Huang… - IEEE Transactions on …, 1997 - ieeexplore.ieee.org
A C-doped GaInP/GaAs heterojunction bipolar transistor (HBT) with a selective buried sub-
collector has been fabricated by two growth steps. The active HBT region was made on the …
collector has been fabricated by two growth steps. The active HBT region was made on the …
[PDF][PDF] Analysis of two-dimensional electron gas formation in InGaAs-based HEMTs
I Takagi, T Kato, H Taguchi - Adv Sci Technol Eng Syst J, 2020 - pdfs.semanticscholar.org
In this study, a theoretical simulation was performed using the Schrodinger-Poisson method
to elucidate the formation factors for two-dimensional electron gas in InGaAsbased HEMTs …
to elucidate the formation factors for two-dimensional electron gas in InGaAsbased HEMTs …
A high-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector
YF Yang, CC Hsu, ES Yang… - IEEE Electron Device …, 1996 - ieeexplore.ieee.org
A C-doped GaInP/GaAs HBT using a selective buried sub-collector has been fabricated by
two growth steps. The device was fabricated with minimum overlap of the extrinsic base and …
two growth steps. The device was fabricated with minimum overlap of the extrinsic base and …
A charge-control HEMT model incorporating deep level effects
R Singh, CM Snowden - Solid-State Electronics, 1999 - Elsevier
A new self-consistent charge-control model incorporating deep level effects is presented. It
takes into account DX centers, substrate trapping and strain in pseudomorphic HEMTs. It is …
takes into account DX centers, substrate trapping and strain in pseudomorphic HEMTs. It is …
[PDF][PDF] A self-consistent charge-control model for HEMT's incorporating deep level effects
R Singh, CM Snowden - Proceedings of the International …, 1993 - in4.iue.tuwien.ac.at
A new self-consistent charge-control model which includes models for realistic trapping
processes is described for a high electron mobility transistor (HEMT). This generalised …
processes is described for a high electron mobility transistor (HEMT). This generalised …
The hydrogen-induced piezoelectric effect in InP HEMTs
SD Mertens - 2003 - dspace.mit.edu
Hydrogen exposure of III-V HEMTs has been shown to cause a threshold voltage shift,[delta]
V [sub] T. This is a serious reliability concern. This effect has been attributed to a H-induced …
V [sub] T. This is a serious reliability concern. This effect has been attributed to a H-induced …
Basic of Pseudomorphic Hemts Technology and Numerical Simulation
This chapter consist of two parts. In the first part we describe the technology used in the
Nanoelectronics Research Centre of Glasgow University for fabrication of high performance …
Nanoelectronics Research Centre of Glasgow University for fabrication of high performance …