GaN-based transistors with p-GaN gate are commonly accepted as promising devices for
application in power converters, thanks to the positive and stable threshold voltage, the low …

With the continued miniaturization of devices in the semiconductor industry, atomic layer
deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the …

In this letter, we studied the forward bias gate breakdown mechanism on enhancement-
mode p-GaN gate AlGaN/GaN high-electron mobility transistors. To the best of our …

Power GaN transistors have recently demonstrated to be excellent devices for application in
power electronics. The high breakdown field and the superior mobility of the 2-dimensional …

This letter reports an in-depth study of the negative threshold voltage instability in GaN-on-Si
metal-insulator–semiconductor high electron mobility transistors with partially recessed …

Developing effective technique to protect the etched-GaN surface from the degradation in a
high-temperature (ie, at~ 780° C) process, such as low-pressure chemical vapor deposition …

In this work, we demonstrate the use of a machine learning (ML)-based statistical approach
to model and analyze the impact of the fabrication processes on the threshold voltage in …

In this paper, fully recessed-gate GaN MISFETs with two different gate dielectrics, ie, plasma-
enhanced atomic layer deposition (PEALD) SiN and ALD Al 2 O 3 gate dielectric, are used …

A novel gate and passivation dielectric stack consisting of a thin metal-organic chemical
vapor deposition (MOCVD) grown in-situ Si 3 N 4 (3 nm) and a thick lowpressure chemical …

This paper reports on an extensive investigation of the gate stability of GaN-based High
Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on …